Atomic scale simulation of physical sputtering of silicon oxide and silicon nitride thin films

Kim, Dongho; Lee, Gun-Hwan; Lee, Seung Yup; Kim, Do Hyun

doi:10.1016/j.jcrysgro.2005.09.045

Cited by 31 publications

(30 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…¼25) is actually much lower than that of the nitrited target (85 nm/h with vol.%N 2 ¼25), in agreement with results from the literature[27,28].…”

supporting

confidence: 92%

“…Three factors can influence this decrease: first of all, the percentage of the main sputtering gas (here argon), second and third, the sputtering yield and the secondary electron emission yield of the target. It has been shown that the two latter are greater for nitride target compounds than for oxide target compounds [27,28]. The change in deposition rate can then be explained in relation with the poisoning of the oxide target when sputtered under dinitrogen.…”

Section: Deposition Ratementioning

confidence: 99%

See 1 more Smart Citation

Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

Paven

Gendre

Benzerga

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

International audienceIn the search for new dielec. and ferroelec. compds., we were interested in the perovskite (Sr1-xLax)2(Ta1-xTix)2O7 solid soln. with ferroelec. end members Sr2Ta2O7 (TCurie=-107 °C) and La2Ti2O7 (TCurie=1461 °C). In order to achieve a Curie temp. close to room temp., the formulation with x=0.01 was chosen and synthesized as thin films by reactive radio-frequency magnetron sputtering. In oxygen rich plasma, a (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 film is deposited, characterized by a band-gap Eg=4.75 eV and an (1 1 0) epitaxial growth on (0 0 1)MgO substrate. The use of nitrogen rich plasma allows to synthesize (Sr0.99La0.01)(Ta0.99Ti0.01)O2N oxynitride films, with band gap Eg∼2.10 eV and a polycryst., textured or epitaxial growth on (0 0 1)MgO substrate. Nitrogen-substoichiometric oxynitride films with larger lattice cells are produced for low dinitrogen percentages in the sputtering plasma

show abstract

“…¼25) is actually much lower than that of the nitrited target (85 nm/h with vol.%N 2 ¼25), in agreement with results from the literature[27,28].…”

supporting

confidence: 92%

Section: Deposition Ratementioning

confidence: 99%

Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

Paven

Gendre

Benzerga

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…Plasmas with higher N 2 percentages lead to films with an intermediate structure, except for the deposition without dioxygen for which a pure oxynitride film is obtained, with the proper band gap (2.30 eV) and crystallization, and greater dielectric loss. High deposition rates obtained under N 2 -rich plasma are coherent with a nitrogen enrichment of the target surface during the deposition process ; as a nitrided target shows higher sputtering and secondary electron emitting yields than an oxide target [36,37] deposition rates are here logically higher for oxynitride than for oxide films. The presence of the oxynitride phase will explain their increased dielectric losses, as already mentioned for oxynitride ceramics compared to oxide ones [11].…”

Section: Discussionmentioning

confidence: 79%

Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

Jacq

Paven

Gendre

et al. 2016

Solid State Sciences

View full text Add to dashboard Cite

François Cheviré, et al.. Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films. Solid State Sciences, Elsevier, 2016Elsevier, , 54, pp.22-29. 10.1016Elsevier, /j.solidstatesciences.2015 M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Graphical AbstractEvolution of the permittivity κ and loss tangent tanδ (@1kHz) • The permittivity of the epitaxial oxide film is 42 @1KHz• The permittivity of the oriented oxynitride film is 60 @1KHz

show abstract

“…[19]- [21] Thus, we attempted plasma CVD synthesis of graphene using helium, which is expected to be effective for preventing impurity incorporation because of it being the lightest inert gas. Figure 1 shows a schematic illustration of the surface-wave microwave plasma CVD equipment.…”

Section: -Toward a High Throughput Process-mentioning

confidence: 99%

“…On the other hand, from the point of view of sputtering that causes release of impurities from the reaction chamber, it is desirable to use lighter inert gas. [19]- [21] Thus, we attempted plasma CVD synthesis of graphene using helium, which is expected to be effective for preventing impurity incorporation because of it being the lightest inert gas. Figure 1 shows a schematic illustration of the surface-wave microwave plasma CVD equipment.…”

Section: -Toward a High Throughput Process-mentioning

confidence: 99%

High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

Hasegawa

Tsugawa²,

Kato³

et al. 2016

Synthesiology English edition

View full text Add to dashboard Cite

attempt to develop high throughput plasma-enhanced CVD for high quality graphene.[8]- [16] 2 Preparation of a substrate for graphene synthesis and suppression of impurity incorporation.In the case of CVD of graphene using a copper foil substrate, surface cleaning technique of copper foil before CVD is especially important. Also in the case of plasma-assisted CVD (plasma CVD), it is necessary to prevent contamination such as impurities released from the reaction chamber by plasma exposure, particularly silicon, which originate from the quartz of antenna units for exciting plasma.Commercially available copper foil surfaces are subjected to anticorrosive treatment in order to prevent oxidation. Moreover, even foil with anticorrosive treatment has a surface that is still covered with a thin copper oxide layer. For high-quality graphene synthesis, it is necessary to remove these copper oxide and anticorrosive treatment carefully. In thermal CVD of graphene, electrolytic cleaning and successive high-temperature treatment at about 1000 °C of the copper foil substrate in the reaction chamber are effective for removing copper oxide and the anticorrosive treatment layer. Furthermore, in order to flatten the copper foil surface, chemical polishing (CMP) before electrolytic cleaning and annealing treatment is effective.[17] [18] On the other hand, electrolytic cleaning is a wet process and thus there is a possibility of recontamination before CVD. Therefore, cleaning methods consistent with CVD are desirable. IntroductionGraphene [1] is a single atomic sheet in which carbon atoms are arranged in a hexagonal honeycomb lattice. Graphene has a very unique band structure (zero bandgap, linear dispersion), and thereby it shows brilliant electronic and optical characteristics such as extremely high carrier mobility and light absorption which does not depend on wavelength. (2.3 % absorption per layer.) Moreover graphene has the property of flexibility which indium tin oxide (ITO) [2] does not possess, and an attempt has been made to use a few layers of graphene(FLG) as transparent electrodes in such devices as flexible organic light-emitting diode (OLED), solar batteries, and displays.For transparent electrode application of graphene, it is necessary to establish production technology of high quality and high throughput for large area graphene. Among the various methods of graphene production such as mechanical exfoliation of bulk graphite, [1][3] exfoliation of graphene oxide in liquid phase, [4] thermal decomposition of SiC, [5] etc., chemical vapor deposition (CVD) on catalytic transition metal surfaces, in particular on a copper surface, has great promise as a production method for transparent electrode application. Recently, high conductivity graphene has been synthesized on copper substrates by energetic development of the thermal CVD method.[6] [7] On the other hand, since throughput of the thermal CVD method is insufficient, synthesis time needs to be significantly shortened for transparent electrode application. In this p...

show abstract

Atomic scale simulation of physical sputtering of silicon oxide and silicon nitride thin films

Cited by 31 publications

References 35 publications

Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

Contact Info

Product

Resources

About