Ion-Shading Effects During Metal Etch in Plasma Processing

Madziwa-Nussinov, Tsitsi; Arnush, Donald; Chen, F.F.

doi:10.1109/tps.2007.905203

Cited by 12 publications

(15 citation statements)

References 11 publications

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“…In other simulations, the ion/electron flux and energy were given by the authors. [25][26][27][28][29][30][31] The result in this case does not match the actual result. We have already developed and reported an on-…”

Section: 3a Introductionmentioning

confidence: 71%

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Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Samukawa

2014

SpringerBriefs in Applied Sciences and Technology

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Etching profile prediction system was developed by combination of an on-wafer sensor and simulation. We have developed on-wafer UV sensor, on-wafer charge-up sensor, and onwafer sheath shape sensor. These sensors can measure plasma process conditions on the sample stage such as UV irradiation, charge-up voltage in high aspect ratio structures, and ion sheath condition at the plasma/surface interface. Then the output of the sensors can be used for computer simulation. The system can predict etching profile anomaly around large scale 3D structure which causes distortion of ion sheath and ion trajectory. Also, it can predict etching profile anomaly caused by the charge accumulation in high-aspect ratio holes. Also, distribution of UV-radiation damage in materials can be predicted.

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Section: 3a Introductionmentioning

confidence: 71%

“…Some researchers investigated ion trajectory predictions. [23][24][25][26][27][28][29][30][31] In most of their investigations, the plasma structure and sheath area were simulated to determine potential. However, there are several problems in such predictions.…”

Section: 3a Introductionmentioning

confidence: 99%

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Samukawa

2014

SpringerBriefs in Applied Sciences and Technology

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“…In other simulations, the ion/electron flux and energy were given by the authors. [6][7][8][9][10][11][12] The result in this case does not match the actual result.…”

Section: Introductionmentioning

confidence: 71%

“…Some researchers investigated ion trajectory predictions. [4][5][6][7][8][9][10][11][12] In most of their investigations, the plasma structure and sheath area were simulated to determine potential. However, there are several problems in such predictions.…”

Section: Introductionmentioning

confidence: 99%

Prediction of Abnormal Etching Profile in High-Aspect-Ratio Via/Hole Etching Using On-Wafer Monitoring System

Ohtake

Fukuda

Jinnai

et al. 2010

Jpn. J. Appl. Phys.

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For the prediction of abnormal etching profiles, an ion trajectory prediction system has recently been developed. In this system, sheath modeling was combined with the on-wafer monitoring technique for accurate prediction. This system revealed that sidewall conductivity strongly affects the charge accumulation and ion trajectory in high-aspect-ratio holes. It was also found that the accumulated charge in adjacent holes is one of the reasons for the generation of twisting profiles according to analysis using the system. We presume that the prediction system is an effective tool for developing nanoscale fabrication.

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“…We reasoned that in some cases the thick and insulating nanosphere multilayers at the sample edges could build up a space charge. Other research has found that local electric fields formed around non-conductive objects in plasma chambers can deflect ion and electron trajectories, thereby causing differential ion flow and etch rates [54][55][56][57][58].…”

Section: The Uniformity Of the Nanorings And Nanocrescentsmentioning

confidence: 99%

Nanorings and nanocrescents formed via shaped nanosphere lithography: a route toward large areas of infrared metamaterials

Lewicka

Bohloul

et al. 2013

Nanotechnology

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This paper presents a new approach to nanosphere lithography, which overcomes undesirable manufacturing issues such as complex tilted-rotary evaporation and ion beam milling. A key innovation in this process is the use of non-conductive edge strips placed on top of the samples prior to metal removal. Such elements help to direct the flow of reactive ions during plasma etching and produce well-ordered arrays of metallic nanorings and nanocrescents over large areas of ∼1 cm(2). The obtained highly uniform nanocrescent array exhibits an electric resonance of 1.7 μm and a magnetic resonance of 3 μm. The absorption resonances of the fabricated nanorings depend on their diameters and shift toward shorter wavelengths (λ = 1.7 μm for do = 308 nm) as compared to larger rings (λ = 2.2 μm do = 351 nm). FDTD-based simulations match well with the experimental results. This 'shaped nanosphere lithography' approach creates opportunities to generate nanorings and nanocrescents that promise potential applications in chemical and biological sensing, for surface enhanced spectroscopy and in the field of infrared metamaterials.

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Ion-Shading Effects During Metal Etch in Plasma Processing

Cited by 12 publications

References 11 publications

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Prediction of Abnormal Etching Profile in High-Aspect-Ratio Via/Hole Etching Using On-Wafer Monitoring System

Nanorings and nanocrescents formed via shaped nanosphere lithography: a route toward large areas of infrared metamaterials

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