2009
DOI: 10.1016/j.diamond.2009.01.001
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Surface modification of single-crystal boron-doped diamond electrodes for low background current

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Cited by 11 publications
(9 citation statements)
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“…The dependence of the space‐charge layer capacitance C SC versus the applied voltage V SC is CSC=qϵnormalrϵ0NnormalA2(VSCϕnormalB)kTq , where q represents the elementary charge, ϵ 0 the dielectric constant of vacuum, ϵ r the relative dielectric constant of the material in use, N A is the doping density, ϕ B the band bending at equilibrium (no applied voltage), k the Boltzmann constant, and T the absolute temperature . The results from the investigations on hydrogen and oxygen‐terminated BDD electrode surfaces using this method have already been reported , thus representing a starting reference point for this study. Due to the better photovoltaic performances previously observed in the case of nitrogen surface terminated BDD and the expected implications for DSSC applications, the band diagram for this kind of termination needed to be determined.…”
Section: Methodsmentioning
confidence: 94%
See 1 more Smart Citation
“…The dependence of the space‐charge layer capacitance C SC versus the applied voltage V SC is CSC=qϵnormalrϵ0NnormalA2(VSCϕnormalB)kTq , where q represents the elementary charge, ϵ 0 the dielectric constant of vacuum, ϵ r the relative dielectric constant of the material in use, N A is the doping density, ϕ B the band bending at equilibrium (no applied voltage), k the Boltzmann constant, and T the absolute temperature . The results from the investigations on hydrogen and oxygen‐terminated BDD electrode surfaces using this method have already been reported , thus representing a starting reference point for this study. Due to the better photovoltaic performances previously observed in the case of nitrogen surface terminated BDD and the expected implications for DSSC applications, the band diagram for this kind of termination needed to be determined.…”
Section: Methodsmentioning
confidence: 94%
“…To insulate the doped layer from the substrate, an undoped diamond layer was grown in between. The typical doping concentrations known from former experiments with similarly manufactured samples were around 10 20 cm −3 . After the growth the wafers were cut into squared pieces of 8 × 8 mm 2 .…”
Section: Methodsmentioning
confidence: 96%
“…The spectra of diamond films deposited on pristine WC router bits shows the typical peaks of nanocrystalline diamond films. The diamond peak at 1332 cm -1 as characteristics peak of sp 3 hybridized carbon is relatively weak while the D clearance of G-band at 1580 cm -1 reveals a large proportion of sp 2 phased carbon from grain boundaries [16]- [21]. The peaks at 1140 cm -1 is attributed to C-H bonds.…”
Section: R Onmentioning
confidence: 95%
“…Multi-layers arrays were obtained by the deposition of conductive and non-conductive diamond on a solid substrate. 0.6 µm electrodes were obtained by etching with an oxygen/argon plasma process [43].…”
Section: Introductionmentioning
confidence: 99%