Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Jiang, Lin; Tang, Xin; Kuang, S.J.; Xiong, Huiming

doi:10.1016/j.apsusc.2009.06.092

Cited by 30 publications

(8 citation statements)

References 26 publications

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“…The Ba 3d 5/2 and the Ba 3d 3/2 peaks are clearly separated at 780.1 and 796.4 eV to form the expected doublet. The separation between Ba 3d 5/2 and Ba 3d 3/2 peaks is 15.3 eV which is consistent with the character of Ba in BaTiO 3 [23]. Figure 4c shows the core level XPS spectrum of Zr 3d.…”

Section: Xps Analysissupporting

confidence: 79%

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

et al. 2016

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Ruddlesden-Popper Ba 3 Zr 2 O 7 thin films have been synthesized via pulsed laser deposition (PLD) technique. The optimization of deposition parameters in PLD enables the formation of thin film of metastable Ba 3 Zr 2 O 7 phase from BaZrO 3 target. In order to see the post-annealing effects on the structural and optical properties, the deposited Ba 3 Zr 2 O 7 thin films were annealed at 500, 600 and 800°C. X-ray diffraction (XRD) reveals the formation of Ba 3 Zr 2 O 7 phase with tetragonal structure. The changes in the surface of the deposited films were analysed by FE-SEM and AFM. The thin film post-annealed at 500°C exhibited the best structural, optical and surface properties. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Zr and O exist mainly in the form of Ba 3 Zr 2 O 7 Ruddlesden-Popper-type perovskite structure.

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Section: Xps Analysissupporting

confidence: 79%

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

et al. 2016

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“…28,29 For the BPB multilayer composite film, the presence of Ba, Ti, and Zr elements on the corresponding atomic orbital can also be displayed at ∼180, ∼480, and ∼790 eV. 30,31 To observe the cross-sectional structure of the composites, SEM images are shown in Figure 3. It can be seen from Figures 3a and 3b that the thickness of BZT insulating layer deposited on the surface of the PVTC film is about 80−100 nm, accompanying a noncompact morphology as shown in Figure S2a.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Improved Energy Storage Performance of P(VDF-TrFE-CFE) Multilayer Films by Utilizing Inorganic Functional Layers

Chen

Zhang

et al. 2021

ACS Appl. Energy Mater.

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Polymer dielectric films are the preferred materials for capacitive energy storage. However, both the discharged energy density and efficiency of ferroelectric polymers dielectrics reduced due to the ferroelectric loss and conduction loss, and so it is urgent to develop effective ways to improve the capability. In this study, inorganic functional layers (INLs), such as SiO 2 and BaZrTiO 3 (BZT), are grown by magnetron sputtering technology, which act as the interlayer or top/bottom layer in the P(VDF-TrFE-CFE) (PVTC) ferroelectric films. The effects of INL thickness and growth sequence on the microstructure and electrical properties have been systematically investigated. The results show that the SiO 2 INL is favorable to improve the breakdown field strength, where BZT INL is beneficial to enhance the polarization of the composite films. The optimized energy storage density of 12.32 J/cm 3 and an efficiency of 64.87% are obtained in the SiO 2 -2h/PVTC/BZT-1h/PVTC/SiO 2 -2h multilayer composite films. The INL forms an interfacial barrier layer at the electrode−dielectric interface, while the development of breakdown path can be inhibited at the dielectric−dielectric interface, thus reducing the leakage current and energy loss. The introduction of inorganic functional layers enables the polymer dielectric films to have an improved energy storage density and efficiency.

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“…Figure 2(a) clearly shows that the C 1s peak at 284.6 eV was used as a standard to correct the binding energy of the XPS spectrum [31]. There is also a weak peak that can be attributed to C-O bonding at 286.0 eV, which is considered to synthesis by the air-atmosphere annealing process [32]. In Figure 2(b), only two peaks are observed in the XPS spectrum related to Sr 3d.…”

Section: Xps Analysismentioning

confidence: 99%

“…Ti 2p 1/2 and Ti 2p 3/2 are clearly separated at 463.85 and 458.30 eV, respectively. The spin-orbit splitting between them is 5.55 eV [31,32]. The valence of Ti ions is 4+, which is obtained from binding energy.…”

Section: Xps Analysismentioning

confidence: 99%

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Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

Tang

Jiang

et al. 2019

Journal of Asian Ceramic Societies

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Amorphous SrTiO 3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO 3 /FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (R off /R on) of 10 2. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO 3 thin films. Ohmic conduction dominated in the initial high-and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO 3 films have potential resistive memory applications.

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Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Cited by 30 publications

References 26 publications

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Improved Energy Storage Performance of P(VDF-TrFE-CFE) Multilayer Films by Utilizing Inorganic Functional Layers

Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

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Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Cited by 30 publications

References 26 publications

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Improved Energy Storage Performance of P(VDF-TrFE-CFE) Multilayer Films by Utilizing Inorganic Functional Layers

Bipolar resistive switching characteristics of amorphous SrTiO3thin films prepared by the sol-gel process

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Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process