Surface-Charge-Collection-Enhanced High-Sensitivity High-Stability Silicon Photodiodes for DUV and VUV Spectral Ranges

Shi, Lei; Nihtianov, Stoyan; Haspeslagh, L.; Scholze, Frank; Gottwald, Alexander; Nanver, L.K.

doi:10.1109/ted.2012.2210225

Cited by 28 publications

(27 citation statements)

References 19 publications

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“…It is known that silicon containing boron layers are resistant to various acidic solutions like H 2 SO 4 , HF and H 3 PO 4 due to the low solubility of the layers. 10 However, it should be noted that the PureB layer can be removed by hot HNO 3 and the boron-rich silicon layer is then oxidized by HNO 3 . Therefore, repeated HNO 3 and HF treatments allow for a removal of the boron-rich layer.…”

Section: 4nm (B)mentioning

confidence: 99%

“…2,3 Ideal low-leakage diode characteristics are achieved for deposition temperatures from 400 to 700…”

mentioning

confidence: 97%

“…From studies of the quantum efficiency of VUV photodiodes 3 fabricated with PureB anode regions subjected to various drive-in procedures it has been found that high efficiencies are maintained despite the increase in junction depth from a few nanometers to the hundred-nanometer range. This is accorded to the defect-free nature of the doping process and the lack of roll-off at the surface of the resulting doping profiles.…”

mentioning

confidence: 99%

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Effects of Annealing on Chemical-Vapor Deposited PureB Layers

Rine

Vlooswijk

Mohammadi

et al. 2013

ECS J. Solid State Sci. Technol.

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Chemical-vapor-deposited pure boron (PureB) layers can be used as a source of p-type boron dopants for thermal diffusion into silicon during a drive-in anneal. In this work, the effect of thermally annealing PureB layers is investigated in terms of surface morphology and electrical properties. The presence of a few nanometer-thick PureB layer on the Si surface was found to increase the silicon oxide growth rate by several factors during annealing in an oxygen-containing atmosphere. The oxide thickness was dependent on the initial PureB layer thickness and oxygen concentration during anneal. In an oxygen-limited atmosphere, the final thickness is insensitive to the anneal temperature as the reaction is diffusion-limited and, after oxide removal, a hydrophilic boron rich layer remains on the Si surface. With a high oxygen concentration, the boron is depleted by an oxidation of the boron-doped silicon resulting in a lower surface concentration and higher sheet resistance. A reaction mechanism involving the oxidation of Si-B compounds to form B 2 O 3 is proposed to explain the experimental observations. With solar cell and other photodiode applications in mind, the sheet resistance and carrier lifetime measurements were performed and show that a one-step oxidation process can simultaneously drive-in the dopants and form an oxide passivation layer. The chemical vapor deposition (CVD) of pure boron (PureB) layers has in recent years been successfully applied for fabricating extremely shallow, less than 10-nm deep, silicon p + n junction diodes. 1This has provided impressive performance of bulk-Si photodiodes for detecting low penetration-depth beams. 2,3 Ideal low-leakage diode characteristics are achieved for deposition temperatures from 400 to 700• C. 4 In addition, the 700 • C PureB deposition can be deposited with well-controlled uniformity and reproducibility down to a thickness of 2 nm in a conformal manner with high selectivity to silicon rather than silicon oxide, 5 making this technology attractive for advanced device architectures.From studies of the quantum efficiency of VUV photodiodes 3 fabricated with PureB anode regions subjected to various drive-in procedures it has been found that high efficiencies are maintained despite the increase in junction depth from a few nanometers to the hundred-nanometer range. This is accorded to the defect-free nature of the doping process and the lack of roll-off at the surface of the resulting doping profiles. These features are also attractive for the manufacture of p + emitter layers for solar cells and for the passivation of depleted interfaces in other types of photodiode structures. A batch furnace system for the CVD of PureB is currently being developed for high-throughput industrial applications. 6 For application in standard n-type crystalline silicon solar cells, substantial drive-in is required to achieve the dopant profiles and sheet resistance necessary for a low series resistance through the p-type surface layers and associated contacts. More critically, a w...

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Section: 4nm (B)mentioning

confidence: 99%

“…2,3 Ideal low-leakage diode characteristics are achieved for deposition temperatures from 400 to 700…”

mentioning

confidence: 97%

mentioning

confidence: 99%

See 1 more Smart Citation

Effects of Annealing on Chemical-Vapor Deposited PureB Layers

Rine

Vlooswijk

Mohammadi

et al. 2013

ECS J. Solid State Sci. Technol.

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“…These are the regions that are expected to be the main sources of leakage current. The fabrication of the PureB regions does not introduce defects in the Si, and the PureB/Si interface is ideally passivated [28,29]. Hence the PureB junction itself has ideal I-V characteristics, also on trenched surfaces [23,24], and it is resistant to radiation damage.…”

Section: Introductionmentioning

confidence: 99%

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

2016

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Junction formation in deep trenches is proposed as a new means of creating a built-in drift field in silicon drift detectors (SDDs). The potential performance of this trenched drift detector (TDD) was investigated analytically and through simulations, and compared to simulations of conventional bulk-silicon drift detector (BSDD) configurations. Although the device was not experimentally realized, the manufacturability of the TDDs is estimated to be good on the basis of previously demonstrated photodiodes and detectors fabricated in PureB technology. The pure boron deposition of this technology allows good trench coverage and is known to provide nm-shallow low-noise p + n diodes that can be used as radiation-hard light-entrance windows. With this type of diode, the TDDs would be suitable for X-ray radiation detection down to 100 eV and up to tens of keV energy levels. In the TDD, the drift region is formed by varying the geometry and position of the trenches while the reverse biasing of all diodes is kept at the same constant voltage. For a given wafer doping, the drift field is lower for the TDD than for a BSDD and it demands a much higher voltage between the anode and cathode, but also has several advantages: it eliminates the possibility of punch-through and no current flows from the inner to outer perimeter of the cathode because a voltage divider is not needed to set the drift field. In addition, the loss of sensitive area at the outer perimeter of the cathode is much smaller. For example, the simulations predict that an optimized TDD geometry with an active-region radius of 3100 µm could have a drift field of 370 V/cm and a photo-sensitive radius that is 500-µm larger than that of a comparable BSDD structure. The PureB diodes on the front and back of the TDD are continuous, which means low dark currents and high stability with respect to leakage currents that otherwise could be caused by radiation damage. The dark current of the 3100-µm TDD will increase by only 34% if an interface trap concentration of 10 12 cm −2 is introduced to approximate the oxide interface degradation that could be caused during irradiation. The TDD structure is particularly well-suited for implementation in multi-cell drift detector arrays where it is shown to significantly decrease the cross-talk between segments. The trenches will, however, also present a narrow dead area that can split the energy deposited by high-energy photons traversing this dead area. The count rate within a cell of a radius = 300 µm in a multi-cell TDD array is found to be as high as 10 Mcps.

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“…The theoretical curve (gray dashed line) is for bare Si with 3-nm native oxide coverage and considers the reflectivity [13], [14]. Solid black curve follows the measured responsivity (dot symbols) of PureB photodiodes with a 2.5-nm-thick PureB-only light-entrance window [5].…”

mentioning

confidence: 99%

UV-sensitive low dark-count PureB single-photon avalanche diode

Mok

Charbon

et al. 2013

2013 Ieee Sensors

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Abstract-A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of 7 µm 2 . An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.Index Terms-Avalanche breakdown, boron, chemical vapor deposition (CVD), Geiger-mode avalanche photodiode, singlephoton avalanche diode (SPAD), ultrashallow junctions, ultraviolet (UV).

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Surface-Charge-Collection-Enhanced High-Sensitivity High-Stability Silicon Photodiodes for DUV and VUV Spectral Ranges

Cited by 28 publications

References 19 publications

Effects of Annealing on Chemical-Vapor Deposited PureB Layers

Effects of Annealing on Chemical-Vapor Deposited PureB Layers

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

UV-sensitive low dark-count PureB single-photon avalanche diode

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