A p + -doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B 2 H 6 as precursor were thermally diffused into silicon. The applicability of this doping process for the doped surfaces of silicon solar cells was evaluated in terms of surface morphology after thermal diffusion, the boron dopant profiles, and sheet resistances, as well as the recombination parameter J 0p + , when the doped layers were passivated by Al 2 O 3 films prepared by atomic layer deposition. Adequate surface passivation could be achieved with a surface recombination contribution to J 0p + of <20 fA/cm 2 for most samples. However, when a boron-rich layer (BRL) was present at the Si surface, a much higher recombination current density was observed, proving that a BRL was detrimental to the high-quality surface passivation of boron-diffused surfaces. It was found that sufficient O 2 in the furnace during the thermal diffusion process could eliminate any potential residual BRL, while excessive O 2 concentration results in boron depletion and a higher sheet resistance. Therefore, in addition to optimizing the initial PureB layer thickness and thermal budget to control the dopant profiles, the O 2 concentration during the diffusion must also be well controlled.