Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

Mok, K.R.C.; Qi, Lin; Vlooswijk, A.H.G.; Nanver, L.K.

doi:10.1016/j.sse.2015.06.011

Cited by 6 publications

(8 citation statements)

References 16 publications

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“…This is also in line with the detected photocurrent (I PD ), Fig. 9(a), using an off-chip Si photodiode (PD) 14 which is a measure of the emission intensity corresponding to the injected diode current (I LED ). For the same I LED , the measured I PD and therefore emission intensity for the Al/GaN/p-Si diode (I PD ∼ 1 nA) is ∼ 3 orders of magnitude higher than for the Al/p-Si diode (I PD ∼ 1 pA).…”

Section: Optical Measurementssupporting

confidence: 81%

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gupta

Banerjee

Dutta

et al. 2018

Journal of Applied Physics

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In this work, we study the charge carrier transport and electroluminescence (EL) in thin-film polycrystalline (poly-) GaN/c-Si heterojunction diodes realized using a plasma enhanced atomic layer deposition (PE-ALD) process. The fabricated poly-GaN/p-Si diode with a native oxide at the interface showed a rectifying behavior (I on /I off ratio ∼ 10 3 at ±3 V) with current-voltage characteristics reaching an ideality factor n of ∼ 5.17. The areal (J a ) and peripheral (J p ) components of the current density were extracted and their temperature dependencies were studied. The space charge limited current (SCLC) in the presence of traps is identified as the dominant carrier transport mechanism for J a in forward bias. An effective trap density of 4.6x10 17 /cm 3 at a trap energy level of 0.13 eV below the GaN conduction band minimum was estimated by analyzing J a . Other basic electrical properties of the material such as free carrier concentration, density of states in the conduction band, electron mobility and dielectric relaxation time were also determined from the current-voltage analysis in the SCLC regime. Further, infrared EL corresponding to the Si bandgap was observed from the fabricated diodes. The observed EL intensity from the GaN/p-Si heterojunction diode is ∼ 3 orders of magnitude higher as compared to the conventional Si only counterpart. The enhanced infrared light emission is attributed to the improved injector efficiency of the GaN/Si diode because of the wide bandgap of the poly-GaN layer and resulting band discontinuity at the GaN/Si interface.

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Section: Optical Measurementssupporting

confidence: 81%

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gupta

Banerjee

Dutta

et al. 2018

Journal of Applied Physics

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show abstract

“…This is also in line with the detected photocurrent (I PD ), Fig. 6.10(a), using an off-chip Si photodiode (PD) [156] which is a measure of the emission intensity corresponding to the injected diode current (I LED ). For the same I LED , the measured I PD and therefore emission intensity for the Al/GaN/p-Si diode (I PD ∼ 1 nA) is ∼ 3 orders of magnitude higher than for the Al/p-Si diode (I PD ∼ 1 pA).…”

Section: Optical Measurementssupporting

confidence: 78%

“…For measuring the emission spectra, an Avaspec UV-Vis/NIR spectrometer from Avantes was used. Further, an off-chip Si photodiode [156] was utilized for photocurrent measurements.…”

Section: Methodsmentioning

confidence: 99%

“…The light emission occurs via band-to-band recombination of injected minorities (electrons) with background majorities (holes) in the p-type Si substrate. In addition, the emitted light was measured via the short-circuit current (I PD ) of an off-chip Si-photodiode [156] as shown in Fig. 3.15(b).…”

Section: Electroluminescence (El) Measurementsmentioning

confidence: 99%

“…Based on our measured I PD (with a η PD of 0.2 at ∼ 1120 nm free-space wavelength [156]), the external quantum efficiency of our LED (at I LED =10 mA) was estimated to be 3.5x10 −7 . Further, from an estimate of the optical extraction efficiency (∼1.5 x 10 −3 ) of our measurement set-up [250], the lower limit of the η LED of our LED was calculated to be ∼2x10 −4 (at I LED =10 mA) without taking into account losses at the top electrode which blocks majority of emission, allowing only light from the periphery of the hexagonal openings (Fig 6.9(a)) to be detected.…”

Section: Optical Measurementsmentioning

confidence: 99%

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Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Gupta¹

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Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining

Liu

Nanver

Scholtes

2017

J. Microelectromech. Syst.

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The properties of nanometer-thin pure boron layers deposited by chemical vapor deposition were investigated for use as a barrier against tetramethyl ammonium hydroxide (TMAH) and potassium hydroxide (KOH) etching of Si. Deposition temperatures of 400 °C and 700 °C were applied to form layers of a few nanometer thick. Down to 2-nm thickness, they were all found to be resistant to these wet Si etchants. Patterning of the layers was achieved with resist masking and standard aluminum wetetchant. The selectivity to Si was extremely high, much greater than 10 4 . Cavities 70 µm deep were etched without measurable etching of the boron layers, and with 100 / 111 etch-rate ratios of about 35 for TMAH and larger than 50 for KOH. Stress levels were measured to be 490 MPa tensile for 400 °C and 1250 MPa compressive for 700 °C deposition. Hundreds of micron wide membranes that remained intact were fabricated.

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Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

Cited by 6 publications

References 16 publications

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining

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