A novel structure of double gate Schottky barrier tunnel field effect transistor (DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) and two gate metals with an HfO2. Silvaco-TCAD simulator has been used for investigating the analog and radio frequency performance of the DG-SBTFET. The proposed device is compared with the conventional devices in terms of electrical parameters including ION current, ION/IOFF ratio, RF performance including transconductances, cut-off frequency, transit time, gain bandwidth product, transconductance generation factor, and transconductance frequency product. Further, we simulate the linearity characteristics of the DG-SBTFET device is compared it with other conventional devices, including the second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), and third-order input intercept point (IIP3). Hence, the proposed DG-SBTFETis suitable for low-power and high-frequency applications.