High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Abstract

A novel structure of double gate Schottky barrier tunnel field effect transistor (DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) and two gate metals with an HfO2. Silvaco-TCAD simulator has been used for investigating the analog and radio frequency performance of the DG-SBTFET. The proposed device is compared with the conventional devices in terms of electrical parameters including ION current, ION/IOFF ratio, RF performance including transconductances, cut-off frequency, transit time, gain bandwidth product, transconductance generation factor, and transconductance frequency product. Further, we simulate the linearity characteristics of the DG-SBTFET device is compared it with other conventional devices, including the second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), and third-order input intercept point (IIP3). Hence, the proposed DG-SBTFETis suitable for low-power and high-frequency applications.

Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications

“…Tunnel Field-Effect Transistors (TFETs) present a promising solution to overcome the constraints of traditional thermionic emission through innovative injection processes based on tunneling phenomena. 4,5 These devices have attracted significant attention for their potential in ultra-low power applications. [6][7][8] However, initial iterations of TFETs [9][10][11] faced challenges such as low I ON and inadequate SS due to issues like junction abruptness and trap presence affecting band-to-band tunnelling.…”