Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications
K. Murali Chandra Babu,
Ekta Goel
Abstract:This manuscript presents a pioneering study on enhancing analog and radio frequency performance through the implementation of negative capacitance source pocket double gate tunnel field-effect transistor. By integrating a ferroelectric material into the gate stack and introducing a fully depleted n-type pocket near the source/channel junction, we achieved significant enhancements in key metrics such as ON current (ION), switching ratio, subthreshold swing (SS), and various analog/RF parameters like transconduc… Show more
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