2006
DOI: 10.1063/1.2189456
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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Abstract: Metal-oxide-semiconductor field effect transistors (MOSFET) with a thin high-k dielectric were fabricated on bulk n-type germanium substrates. Surface oxides were thermally desorbed in situ by heating the substrates under ultrahigh vacuum conditions. First an ultrathin passivating layer was formed by evaporating germanium in the presence of atomic oxygen and nitrogen supplied from a remote radio frequency plasma source. Subsequently, the HfO2 dielectric was deposited by evaporating hafnium in the presence of a… Show more

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Cited by 76 publications
(45 citation statements)
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“…As a result, the current-voltage (CV) characteristics are non-ideal [5] exhibiting large hysteresis and frequency dispersion mainly in inversion [9,10] and high interface density of states D it , typically around 5 × 10 12 -10 13 eV − 1 cm − 2 , which cannot be cured even after H 2 or other post deposition annealing treatment. In addition, channel mobility in Ge FETs [8], is lower than expected, especially in n-channel FETs. This is a serious drawback attributed, in part, to the poor quality of the GeON passivating layer.…”
Section: Introductionmentioning
confidence: 65%
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“…As a result, the current-voltage (CV) characteristics are non-ideal [5] exhibiting large hysteresis and frequency dispersion mainly in inversion [9,10] and high interface density of states D it , typically around 5 × 10 12 -10 13 eV − 1 cm − 2 , which cannot be cured even after H 2 or other post deposition annealing treatment. In addition, channel mobility in Ge FETs [8], is lower than expected, especially in n-channel FETs. This is a serious drawback attributed, in part, to the poor quality of the GeON passivating layer.…”
Section: Introductionmentioning
confidence: 65%
“…3-5 above suggest that the GeO x or GeON interfacial layers are unstable and are partly dissociated by reaction with HfO 2 releasing Ge or oxidized Ge complexes inside the HfO 2 layer. Despite the instability of the interfacial layer and the Ge in-diffusion, these gate stacks produce capacitors with low EOT and low gate leakage [5,13] as well as functional Ge MOSFET devices having sub-1 nm EOT values [8] and high Ion/Ioff current ratios. As it can be seen from Fig.…”
Section: Hfo 2 With Interfacial Geo(n) Layersmentioning
confidence: 99%
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“…This is driven by the advent of high-k gate dielectric materials as these have eliminated the requirement of a good quality native oxide in advanced nanoelectronic devices [6,7]. Additionally, the recent investigation of diffusion phenomena such as the discovery that boron diffuses slower in Ge than originally thought has also assisted the exploitation of Ge [8].…”
Section: Introductionmentioning
confidence: 99%
“…The introduction of high-k dielectrics such as HfO 2 and ZrO 2 can lead to a lowering of the equivalent oxide thickness and sharpening of the Ge/dielectric interface. [12][13][14] However, the performance is compromised by the inability to achieve a low equivalent oxide thickness and good interface quality simultaneously. Presently, there is a trend to readdress the incorporation of GeO 2 as a possible passivation layer (Ge/GeO 2 /high-k dielectric stack).…”
Section: Introductionmentioning
confidence: 99%