Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate

Kato, Akira; Kanazawa, Toru; Uehara, Eiji; Yonai, Yoshiharu; Miyamoto, Yasuyuki

doi:10.1109/iciprm.2013.6562631

Cited by 8 publications

(4 citation statements)

References 3 publications

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“…In this case, the transfer of epitaxially grown layers onto a Si substrate can be simultaneously introduced for future integration with Si-CMOS circuits. In our first trial, we observed degradations in the drain current density and maximum transconductance because the channel thickness was too small [5]. In this report, we observed the channel-thickness dependence of fabricated InGaAs MOSFETs with an n-InP source on a Si substrate.…”

Section: Introductionmentioning

confidence: 59%

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Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density

Ohsawa

Kato

Kanazawa

et al. 2014

IEICE Electron. Express

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InGaAs is a promising material that can replace the current Si nMOSFET in CMOS because of its high electron mobility. To realize a high drain current density at a low supply voltage in InGaAs, the introduction of a heavily doped source is essential. We introduced an epitaxially grown n-InP source and obtained a high drain current density. However, short-channel effects were observed in a previous study; thus, we introduced extremely-thin-body III-V-OI InGaAs MOSFETs on a Si substrate. Accounting for the channel-thickness dependence, a drain current density of 2.04 A/mm at V D F 0.5 V and clear suppression of the short-channel effects were observed for a channel thickness of 10 nm.

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Section: Introductionmentioning

confidence: 59%

“…The fabrication process is almost the same as the procedure reported in [5]. First, an epitaxial structure with a 5-nm i-InP barrier, an i-InGaAs channel, an n-InP source, a 10-nm n-InGaAs contact, a 20-nm i-InP etch stop, and a 200-nm i-InGaAs etch stop was grown on an n-InP substrate by MOVPE.…”

Section: Methodsmentioning

confidence: 99%

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density

Ohsawa

Kato

Kanazawa

et al. 2014

IEICE Electron. Express

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“…In the past few years, various materials have been aggressively investigated as alternative channel materials to Si such as Ge for p-channel and III-V compound semiconductors for n-channel transistors. It is revealed that saturation velocity and electron mobility of InGaAs are two times and ten times greater than that of Si, respectively (Yonai et al, 2011;Kato et al, 2013).…”

Section: Discussionmentioning

confidence: 97%

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Professor Ashutosh Ghosh is currently acting as the Vice Chancellorof Rani Rashmoni Green University, Hooghly, West Bengal.After graduation and post-graduation in Chemistry from Presidency college, Kolkata and University of Calcutta respectively, he completed his Ph.D. from Indian Association for the Cultivation of Science, Kolkata. His field of research is synthesis, structural characterization, magnetic properties, and catalytic activities of homoand hetero-metallic poly-nuclear complexes of 1st transition metal ions. Under his supervision till date 25 students have been awarded with Ph.D. and he has 290 published papers in various international journals to his credit. He had been UNESCO Fellow at

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“…To the best of our knowledge, these values are the best values that have ever been reported and they satisfy the ITRS target requirements. On the other hand, shortchannel effects were observed in these devices, and a III-V-OI InGaAs MOSFET with an n-InP source on an Si-substrate with vertical scaling was fabricated [12,13]. The thickness of the Al 2 O 3 layer was reduced from 10 nm to 5 nm, and that of the InGaAs channel layer was reduced from 12 nm to 10 nm.…”

Section: Heavily Doped Inp Sourcementioning

confidence: 98%

InGaAs MOSFET source structures toward high speed/low power applications

Miyamoto

Kanazawa

Yonai

et al. 2014

26th International Conference on Indium Phosphide and Related Materials (IPRM)

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Short Abstract-High on-currents (I on ) and low off-currents (I off ) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high I on in InGaAs MOSFETs, and I D = 2.4 mA/ m at V D = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I off . Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I on and low I off realization.

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Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate

Cited by 8 publications

References 3 publications

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density

Recent Trend in Physical Sciences

InGaAs MOSFET source structures toward high speed/low power applications

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