InGaAs MOSFET source structures toward high speed/low power applications

Abstract

Short Abstract-High on-currents (I on ) and low off-currents (I off ) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high I on in InGaAs MOSFETs, and I D = 2.4 mA/ m at V D = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I off . Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I on and low I off realization.