HfS2 is the novel transition metal dichalcogenide, which has not been experimentally investigated as the material for electron devices. As per the theoretical calculations, HfS2 has the potential for well-balanced mobility (1,800 cm2/V·s) and bandgap (1.2 eV) and hence it can be a good candidate for realizing low-power devices. In this paper, the fundamental properties of few-layer HfS2 flakes were experimentally evaluated. Micromechanical exfoliation using scotch tape extracted atomically thin HfS2 flakes with varying colour contrasts associated with the number of layers and resonant Raman peaks. We demonstrated the I-V characteristics of the back-gated few-layer (3.8 nm) HfS2 transistor with the robust current saturation. The on/off ratio was more than 104 and the maximum drain current of 0.2 μA/μm was observed. Moreover, using the electric double-layer gate structure with LiClO4:PEO electrolyte, the drain current of the HfS2 transistor significantly increased to 0.75 mA/μm and the mobility was estimated to be 45 cm2/V·s at least. This improved current seemed to indicate superior intrinsic properties of HfS2. These results provides the basic information for the experimental researches of electron devices based on HfS2.
Gain is given theoretically for quantum-well wire lasers where electrons are confined one-dimensionally. Maximum gain is obtained for a quantum-well wire perpendicular to light propagation, due to anisotropy of the dipole moment. Although the density-of-states is infinite at subband edges, gain remains finite due to the intraband relaxation. Therefore, high gain can be obtained by reducing intraband scatterings. Gain in 100 Å×100 Å Ga0.47In0.53As/InP quantum-well wires is about twice that in 100 Å thick conventional quantum-wells, and reduction of the laser threshold is expected.
60 nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250 nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114 mS/mm and a current-gain cutoff frequency (f T ) of 710 GHz were achieved at V DS ¼ 0:5 V. #
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