Theoretical Gain of Quantum-Well Wire Lasers

Abstract

Gain is given theoretically for quantum-well wire lasers where electrons are confined one-dimensionally. Maximum gain is obtained for a quantum-well wire perpendicular to light propagation, due to anisotropy of the dipole moment. Although the density-of-states is infinite at subband edges, gain remains finite due to the intraband relaxation. Therefore, high gain can be obtained by reducing intraband scatterings. Gain in 100 Å×100 Å Ga0.47In0.53As/InP quantum-well wires is about twice that in 100 Å thick conventional quantum-wells, and reduction of the laser threshold is expected.

Quantum well lasers--Gain, spectra, dynamics

“…They predicted a reduction in the temperature dependence of the threshold current due to the peaked structure of the density of states. In addition, the gain characteristics [87] and the dynamic properties were also investigated [lo]. Although Petroff tried to fabricate quantum wire structures [88], no satisfactory quantum wire structure has been fabricated for optical devices or electronic devices [89] to date.…”

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

“…Selfassembled QDs have superior properties, resulting from their three-dimensional confinement, and find many applications in optical devices such as solar cells, QD lasers, focal plane arrays, and infrared detectors [1][2][3][4][5]. The optical and electrical properties of such heterostructures can be modulated by tuning the size, shape, and density of the QDs as well as the capping layers.…”

GaInAsP/InP quantum-wire lasers

“…where the subscripts c and v denote the conduction and valence bands, respectively, ω is the angular frequency of the input light, n r is the refractive index without the dispersion at the active region, R cv 2 is the transition matrix element of the dipole moment [81], [82], f c and f v are the Fermi functions for the conduction and valence bands, respectively, τ in is the intraband relaxation time [83], and E cv is the transition energy between the conduction and valence bands.…”