We have realized InP/InGaAs composite-channel metal–oxide–semiconductor field-effect transistors with both selectively regrown n+-InGaAs source/drain regions and Al2O3 as a gate dielectric. A 100-nm-long channel was fabricated by laterally buried regrowth in a channel undercut by metalorganic vapor phase epitaxy. The carrier density of the regrown layer was 2.9×1019 cm-3. A drain current Id of 1.34 mA/µm was achieved at a drain voltage Vd of 1 V and a gate voltage Vg of 3 V. A transconductance gm of 817 µS/µm at Vd = 0.65 V was also observed at the same time. The improvement in the subthreshold slope can be explained by the decrease in dielectric/semiconductor interface trap density.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.