Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky, Fazel Zare; Tang, Boxin; Ma, Rui; Jochem, Krystopher S.; Hyun, Woo Jin; Song, Donghoon; Koester, Steven J.; Lodge, Timothy P.; Frisbie, C. Daniel

doi:10.1002/adfm.201902028

Cited by 54 publications

(53 citation statements)

References 70 publications

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“…[26][27][28] Present strategies for solid-state electrolytes include hydrogels, ion-gels which incorporate aqueous electrolytes, ionic liquids within an organic matrix. [29][30][31] However, hydrogels-based ionic conductive materials are susceptible to moisture or weight loss, a side effect of dehydration at higher temperature, [31,32] leading to a short operational life. The poor miscibility of the ionic liquids within polymers at concentrations required for realizing high ionic conductivity result in viscous, thick gel electrolytes with plastic deformation during mechanical stimuli [33] that are not appropriate for use in flexible and conformal epidermal applications.…”

mentioning

confidence: 99%

Contact Modulated Ionic Transfer Doping in All‐Solid‐State Organic Electrochemical Transistor for Ultra‐High Sensitive Tactile Perception at Low Operating Voltage

Chen

Surendran

et al. 2020

Adv Funct Materials

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Ionic‐electronic coupling across the entire volume of conjugated polymer films endows organic electrochemical transistors (OECTs) with high transconductance (gm) and low operating voltage. However, OECTs utilize liquid electrolytes, which limit their long‐term operation, reproducibility, and integration while solid electrolytes typically result in inefficient ion transport. Here, a solid polymer electrolyte is shown that can facilitate good electrochemical response in conjugated polymers and yield high OECT performance. This allows for the OECT‐based pressure sensors, modulated through a pressure sensitive ionic doping process. The pressure sensor exhibits the highest sensitivity ever measured (≈10 000 kPa−1) and excellent stability. Flexible sensor arrays achieve static capture of spatial pressure distribution and enable monitoring of dynamic pressure stimuli. The findings here demonstrate that all‐solid‐state OECTs are good candidates for providing rich tactile information, enabling applications for soft robotics, health monitoring, and human‐machine interfaces.

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confidence: 99%

Contact Modulated Ionic Transfer Doping in All‐Solid‐State Organic Electrochemical Transistor for Ultra‐High Sensitive Tactile Perception at Low Operating Voltage

Chen

Surendran

et al. 2020

Adv Funct Materials

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“…The operation frequency can be improved when reducing the device's parasitic capacitance, increasing the conductivity of the ionic liquid (IL), and so on. [ 53,54 ] These TFTs have the potential to develop novel neuromorphic devices and logic circuits to monitor the human activities.…”

Section: Resultsmentioning

confidence: 99%

A Universal Method for High‐Efficiency Immobilization of Semiconducting Carbon Nanotubes toward Fully Printed Paper‐Based Electronics

Ren

Wang

et al. 2021

Adv Elect Materials

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Semiconducting single‐walled carbon nanotubes (sc‐SWCNTs) are promising candidates for constructing high‐performance fully printed flexible thin film transistors (TFTs) and circuits. How to achieve highly dense and uniform SWCNT thin films on different substrates has become a key scientific issue for printed flexible carbon‐based electronics. In this work, a universal method to efficiently immobilize conjugated polymer‐sorted sc‐SWCNTs on different substrates using solution‐processable SiO2 thin film as the adhesion layer is developed. Fully printed top‐gate SWCNT TFTs are successfully constructed by combining aerosol jet and inkjet printing using silver electrodes and ionic liquid‐cross‐linkable‐poly(4‐vinylphenol) as metal contact electrodes and dielectrics, respectively. Consequently, the fully printed paper‐based SWCNT TFTs represent extraordinary mechanical flexibility and good electrical properties with high on/off ratio (higher than 105), small subthreshold swing (≈70 mV dec−1), and small hysteresis, as well as high carrier mobility (up to 10.8 cm2 V−1 s−1) at low gate voltages (±1 V). In addition, the resistor‐loaded fully printed paper‐based inverters are also achieved using printed carbon nanotube conductive lines as the loaded resistors, exhibiting relatively large gains (16 at VDD of 1 V) and excellent mechanical flexibility. This work represents an encouraging advancement toward the practical applications of SWCNTs for high‐performance, low‐cost, and eco‐friendly paper‐based electronics.

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“…Moreover, a value of C DL as 10 µF cm −2 has generally been considered as the maximum value of double‐layer capacitance of an oxide semiconductor material. [ 36,69 ] In this regard, the value of C DL for pure metal is found to be around 20–25 µF cm −2 . [ 70,71 ] The estimated averaged linear mobility values are shown in Figure a–c for the as‐prepared and remeasured devices, respectively.…”

Section: Resultsmentioning

confidence: 99%

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

Cherukupally

Divya

Dasgupta

2020

Adv Elect Materials

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kinds of solid electrolytes [29-40] have been used as the gate insulators. Within this solution processed/printable semiconductor technologies, inorganic oxides hold paramount positions owing to their unparalleled transport properties, abundance and low cost. [41-43] In fact, the performance of printed oxide TFTs have steadily improved over the recent times and have certainly become substantially superior to their organic counterparts. In this regard, among the oxide semiconductors of choice, indium oxide have received specific attention due to their chemical and environmental stability resulting in high device lifetime and particularly high carrier mobility which can be easily reproduced even when they are solution processed. [44-47] In the present study, the indium oxide precursor ink has long been adjusted for its easy printability, homogeneous film formation and improved electronic transport/carrier mobility values. With this thoroughly optimized semiconductor material, different solid electrolytic insulators in the form of CSPEs and ion gels have been examined for their device performance and relative environmental stability. Recently, solution processed high-k oxide dielectrics have also shown good promise with low process temperature and device performance. However, high performance solid electrolytes may always offer crucial advantage in terms of semiconductor/insulator interface quality, high gating efficiency, easy printability, room temperature processability and high capacitance values enabling extremely low operating voltages of the TFTs (<2 V). [38,48-51] The first notable instance of employing electrolytes in fieldeffect transistors (FETs) can be traced back to the work carried out by Bergveld in 1970, which has later been used as ion-sensitive FET sensors. [52] Tardella and Chazalviel in 1985 studied nonaqueous electrolytes. [53] One of the earliest examples of solid electrolyte has been poly(ethylene oxide) (PEO) doped with lithium salt. [54] In this regard, Frisbie and co-workers had reported solid polymer electrolyte based on mixture of lithium perchlorate (LiClO 4) salt in a PEO polymer matrix to be used as gate insulator in electronic devices. [55,56] As a result of the increased cross-linking points due to the interaction between the Li + and the PEO chains, the ion transport in these electrolytes is primarily dependent on the temperature and the Printed oxide thin film transistors (TFTs) have outperformed their organic counterparts in the recent past; printable solid electrolytic insulators have also emerged as a suitable alternative to oxide dielectrics. In the present study, multiple composite solid polymer electrolytes (CSPEs) and an easyto-formulate ion gel are fabricated and characterized for their double-layer capacitance (C DL) values and the quality of electrostatic coupling. In the next step, alongside printed In 2 O 3 as the semiconductor channel, the performance of the solid electrolytes is evaluated using printed top-gate TFTs. The semiconductor ink formulation and the device ar...

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Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Cited by 54 publications

References 70 publications

Contact Modulated Ionic Transfer Doping in All‐Solid‐State Organic Electrochemical Transistor for Ultra‐High Sensitive Tactile Perception at Low Operating Voltage

Contact Modulated Ionic Transfer Doping in All‐Solid‐State Organic Electrochemical Transistor for Ultra‐High Sensitive Tactile Perception at Low Operating Voltage

A Universal Method for High‐Efficiency Immobilization of Semiconducting Carbon Nanotubes toward Fully Printed Paper‐Based Electronics

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

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