A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

Abstract

kinds of solid electrolytes [29-40] have been used as the gate insulators. Within this solution processed/printable semiconductor technologies, inorganic oxides hold paramount positions owing to their unparalleled transport properties, abundance and low cost. [41-43] In fact, the performance of printed oxide TFTs have steadily improved over the recent times and have certainly become substantially superior to their organic counterparts. In this regard, among the oxide semiconductors of choice, indium oxide have received specific attention due to their chemical and environmental stability resulting in high device lifetime and particularly high carrier mobility which can be easily reproduced even when they are solution processed. [44-47] In the present study, the indium oxide precursor ink has long been adjusted for its easy printability, homogeneous film formation and improved electronic transport/carrier mobility values. With this thoroughly optimized semiconductor material, different solid electrolytic insulators in the form of CSPEs and ion gels have been examined for their device performance and relative environmental stability. Recently, solution processed high-k oxide dielectrics have also shown good promise with low process temperature and device performance. However, high performance solid electrolytes may always offer crucial advantage in terms of semiconductor/insulator interface quality, high gating efficiency, easy printability, room temperature processability and high capacitance values enabling extremely low operating voltages of the TFTs (<2 V). [38,48-51] The first notable instance of employing electrolytes in fieldeffect transistors (FETs) can be traced back to the work carried out by Bergveld in 1970, which has later been used as ion-sensitive FET sensors. [52] Tardella and Chazalviel in 1985 studied nonaqueous electrolytes. [53] One of the earliest examples of solid electrolyte has been poly(ethylene oxide) (PEO) doped with lithium salt. [54] In this regard, Frisbie and co-workers had reported solid polymer electrolyte based on mixture of lithium perchlorate (LiClO 4) salt in a PEO polymer matrix to be used as gate insulator in electronic devices. [55,56] As a result of the increased cross-linking points due to the interaction between the Li + and the PEO chains, the ion transport in these electrolytes is primarily dependent on the temperature and the Printed oxide thin film transistors (TFTs) have outperformed their organic counterparts in the recent past; printable solid electrolytic insulators have also emerged as a suitable alternative to oxide dielectrics. In the present study, multiple composite solid polymer electrolytes (CSPEs) and an easyto-formulate ion gel are fabricated and characterized for their double-layer capacitance (C DL) values and the quality of electrostatic coupling. In the next step, alongside printed In 2 O 3 as the semiconductor channel, the performance of the solid electrolytes is evaluated using printed top-gate TFTs. The semiconductor ink formulation and the device ar...

Inkjet-printed transparent micro-supercapacitors with morphology tailored co-continuous mesoporous Mn3O4

“…Although the aqueous CSPE based printed microsupercapacitors demonstrate high specic capacitance and energy density values, in an effort to obtain printed MSCs with higher potential window and even larger specic capacitance values, a non-aqueous solvent dimethyl sulfoxide (DMSO) and a plasticizer propylene carbonate (PC)-based CSPE has been used for the MSC fabrication. This DMSO and PC based CSPE has earlier been optimized for electrochemical stability, 30,31 easy printability 32 and a large potential window 33 and used in eldeffect devices. 34,35 Here, for the symmetric MSC the chosen potential window has been À1.3 V to 1.3 V, i.e.…”

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

“…In addition, it may be noted that these TFTs typically show excellent environmental and time stability as has earlier been demonstrated in our previous study, where the In 2 O 3 TFTs are found to maintain their strong device performance even after 8 months of air exposure. [ 18 ]…”

“…In addition, it may be noted that these TFTs typically show excellent environmental and time stability as has earlier been demonstrated in our previous study, where the In 2 O 3 TFTs are found to maintain their strong device performance even after 8 months of air exposure. [18] The objective of the study was to demonstrate inkjet-printed (high-performance) CMOS inverters, processed with a single annealing step at 350 °C, that is, compatible with polyimide substrates. Consequently, as a logical next step, Cu x O-based top-gate PMOS TFTs were fabricated.…”

“…[17] Solution-based fabrication techniques involving either spin/spray coating or inkjet printing have also been reported. [15,[18][19][20][21][22][23] However, when it comes to Cu x O-based TFTs, the typical process temperatures (≥400 °C) or reported operating voltages have always been very high. [24][25][26] Oxide semiconductors are becoming the materials of choice for modern-day display industries.…”

Inkjet‐Printed MoS2 Transistors with Predominantly Intraflake Transport

“…The printed silver ink was cured on hot plate at 200 °C for 1 h in air; subsequently, annealing at 300 °C was carried out in an inert (Ar) atmosphere. Next, the electrolytic insulator, i.e., the CSPE formulation (σ ≈10 −3 -10 −2 S cm −1 ) [52][53][54] was printed to cover the semiconductor channel, at least a couple of hours was allowed for the CSPE layer to dry at room temperature and then printing of the PEDOT:PSS (Sigma Aldrich Chemie GmbH) top gate concluded the device fabrication (Figure 2d).…”