Inkjet‐Printed MoS₂ Transistors with Predominantly Intraflake Transport

Abstract

2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare combination of physical properties that include a large‐enough bandgap to ensure sufficient current modulation in transistors, matching electron and hole mobility for complimentary logic operation, and sufficient mechanical flexibility of the nanosheets. Moreover, the solvent‐exfoliated TMD‐nanosheets may also be processed at low temperatures and onto a wide variety of substrates. However, the poor inter‐flake transport in solution‐cast 2D‐TMD network transistors hinders the realization of high device mobility and current modulations that the intraflake transistors can regularly demonstrate. In this regard, fully printed and electrolyte‐gated, narrow‐channel MoS2 field‐effect transistors (FETs) with simultaneous high current saturation (>310 µA µm−1) and on–off ratio (>106) are proposed here. The transport limitation is overcome by printing an additional metal layer onto the 2D‐TMD nanosheet channel, which substantially shortens the effective channel lengths and results in predominant intraflake transport. In addition, a channel‐capacitance‐modulation induced subthermionic transport is recorded, which leads to a subthreshold slope value as low as 7.5 mV dec−1. On the other hand, thermionic MOSFETs and fully printed depletion‐mode NMOS inverters are also presented. The demonstrated generic approach involving chemically exfoliated nanosheet inks and the absolute device yield indicates the feasibility of fully printed 2D‐TMD electronics.

Inkjet-printed transparent micro-supercapacitors with morphology tailored co-continuous mesoporous Mn3O4

“…Although the aqueous CSPE based printed microsupercapacitors demonstrate high specic capacitance and energy density values, in an effort to obtain printed MSCs with higher potential window and even larger specic capacitance values, a non-aqueous solvent dimethyl sulfoxide (DMSO) and a plasticizer propylene carbonate (PC)-based CSPE has been used for the MSC fabrication. This DMSO and PC based CSPE has earlier been optimized for electrochemical stability, 30,31 easy printability 32 and a large potential window 33 and used in eldeffect devices. 34,35 Here, for the symmetric MSC the chosen potential window has been À1.3 V to 1.3 V, i.e.…”

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

“…The non-standard device geometry involves printing of an additional metal layer (e.g., an inkjet-printed silver layer) on top of the mesoporous semiconductor channel. [21,29,39,40] The detailed step-by-step fabrication of the edge-FET NMOS devices is summarized in Figure 2a-d. The printed silver layer must maintain a spatial overlap with the source and drain electrodes (as shown in Figure 2b), thus reducing the effective channel lengths to only the thickness of the printed In 2 O 3 film.…”

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

“…As for the exfoliation of 2D TMDs, chemical ion intercalation-assisted LPE method is commonly adopted. [84][85][86] Lithium-ion intercalation LPE, as one of the effective methods, is often used to obtain monolayer MoS 2 flakes. [86] Compared with ultrasound-assisted LPE, ion intercalation LPE can achieve nanosheets with higher yield and more uniform size and thickness.…”