Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Abstract

In this paper, the transition rate (TR) from the high to the low resistance state of a HfO 2 -based Resistive Random Access Memory (RRAM) is investigated. TR is statistically characterized by applying constant voltage stresses in the range from 0.45V to 0.65V. It is found that TR follows a voltage dependence that closely resembles that exhibited by MIS/MIM structures when subjected to constant electrical stress but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

“…The CF acts as a bridge allowing or blocking the pass of electrons in one or the opposite direction. For a ruptured CF, the device is in the high resistance state (HRS), often characterised by an exponential I-V relationship, while the completion of the CF leads to the low resistance state (LRS), which often exhibits a linear current or voltage dependence [48], [53]. Within these two extreme situations, the modulation of the CF transport properties by voltage-controlled redox reactions renders intermediate states.…”

“…The positive and negative ridge functions in Eq. 2, Γ + (V ) and Γ − (V ) represent the transitions from HRS to LRS (SET) and vice versa (RESET) and can be physically linked to the completion and destruction of the CF [48], [53], respectively. They are defined by Eqs.…”

Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

“…Such migration of ions causes the alternate completion and destruction of a conductive filament (CF) spanning across the insulating film. For a ruptured CF, the device is in the high resistance state (HRS), often characterized by an exponential I-V relationship, while the completion of the CF leads to the low resistance state (LRS), which often exhibits a linear I-V curve [45,46]. In between these two extreme situations, the modulation of the CF transport properties renders intermediate states by voltage-controlled redox reactions.…”

“…where min() and max() are the minimum and maximum functions, respectively, and ⃖� is the voltage a timestep before V. The positive and negative ridge functions in Equation 2, Γ + (V) and Γ − (V) represent the transitions from HRS to LRS (SET) and vice versa (RESET) and can be physically linked to the completion and destruction of the CF [45,46], respectively. They are defined by Equations 3and (4)…”

Ruptura dieléctrica en aislantes de alta constante: Desafíos de fiabilidad y oportunidades en computación neuromórfica

“…En este resumen, se presentan algunos de los resultados más relevantes en torno al fenómeno de ruptura dieléctrica en materiales de alta constante dieléctrica, donde se muestra como la dinámica espaciotemporal de la generación de defectos permite explicar las principales diferencias observadas frente al dióxido de Silicio (F. Aguirre et al 2019). Por otro lado, se estudia la dinámica temporal en la transición entre HRS y LRS en memorias resistivas, poniendo de manifiesto el rol clave de los defectos que componen el filamento conductivo (F. L. Aguirre et al 2019). Finalmente, las mismas son utilizadas para implementar un sistema neuromórfico para el reconocimiento de patrones (F. L. Aguirre et al 2020).…”