2011 International Reliability Physics Symposium 2011
DOI: 10.1109/irps.2011.5784495
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Study of void formation kinetics in Cu interconnects using local sense structures

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Cited by 13 publications
(2 citation statements)
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“…Such barrier is representative for extremely thin conductive barriers. The void formation model has been taken from [10][11]: the void is assumed to form with a fixed length (assumed to be 50nm in our calculations) into the line with a height H void as a function of time. The assumptions of barrier thickness and resistivity for the different cases are summarized in table I.…”
Section: Resultsmentioning
confidence: 99%
“…Such barrier is representative for extremely thin conductive barriers. The void formation model has been taken from [10][11]: the void is assumed to form with a fixed length (assumed to be 50nm in our calculations) into the line with a height H void as a function of time. The assumptions of barrier thickness and resistivity for the different cases are summarized in table I.…”
Section: Resultsmentioning
confidence: 99%
“…2) Growth phase: The resistance of the line does not change significantly even after void nucleation. The void grows and reaches a critical size to cover the cross-section of the line, after which the resistance of the line starts to increase [22]. The time required for the void to grow to a critical size ( l crit ) after σ crit is reached is called the incubation time (t i ).…”
Section: Proposed Em Analysis Model a Em Model Calibrationmentioning
confidence: 99%