2007
DOI: 10.1143/jjap.46.7279
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Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

Abstract: Sudden increases in the background gamma-radiation dose may occur due to the removal of 222 Rn and 220 Rn progeny from the atmosphere by wet deposition mechanisms. This contribution has been measured using a Geiger-Muller detector at the Atomic Weapons Establishment (Aldermaston, UK) during July 2005-April 2006. The results are approximated by a log-normal distribution and there were nine separate occurrences of the gamma-radiation dose exceeding 125% of the geometric mean value. The increases were associated … Show more

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Cited by 26 publications
(13 citation statements)
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“…High stability (i.e., long lifetime of radical anions) provides greater opportunity for excess electrons to transfer to the photoacid generator (PAG) and increase the acid generation yield. However, a large amount of fluorine substitution might change the electrostatic interactions at the interface with a silicon wafer or BARC (bottom antireflective coating) layer, 29 as well as the compatibility with the PAG and/or quencher. 30 Incompatibility would cause phase separation in a thin resist film, and thus, a homogeneous lateral distribution of acid would not be guaranteed.…”
Section: Resultsmentioning
confidence: 99%
“…High stability (i.e., long lifetime of radical anions) provides greater opportunity for excess electrons to transfer to the photoacid generator (PAG) and increase the acid generation yield. However, a large amount of fluorine substitution might change the electrostatic interactions at the interface with a silicon wafer or BARC (bottom antireflective coating) layer, 29 as well as the compatibility with the PAG and/or quencher. 30 Incompatibility would cause phase separation in a thin resist film, and thus, a homogeneous lateral distribution of acid would not be guaranteed.…”
Section: Resultsmentioning
confidence: 99%
“…1(e), is due to the vertical standing waves caused by the reflection from the bare silicon substrate [34]. To prevent generation of undesired patterns, anti-reflective coating is widely used where it controls the reflection of the laser light source at the surface of the substrate [35][36][37][38].…”
Section: Enhancement On Pattern Resolutionmentioning
confidence: 99%
“…The trench-first process has a relatively simple etch, but the via lithography is difficult, because a large depth of focus is required to print vias in trenches [16,17,[33][34][35][36]. An organic anti-reflective coating (ARC) is generally used during trench lithography ( Figure 8.6B) [37]. The via-first process is difficult because the SiN or SiCN etch stop layer at the bottom of the via must be preserved during the via etch and trench etch to avoid exposing the underlying Cu to oxidizing resist strip chemistries [34].…”
Section: Dielectric Patterningmentioning
confidence: 99%
“…In contrast, for the via-first process, the via lithography is relatively simple, but the trench etch is difficult [33,34]. The organic ARC layer planarizes the topography from the vias, protects the etch stop layer from erosion during the trench etch, and can help prevent resist poisoning, by slowing down amine diffusion in the resist [37][38][39]. An organic anti-reflective coating (ARC) is generally used during trench lithography ( Figure 8.6B) [37].…”
Section: Dielectric Patterningmentioning
confidence: 99%