Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

Abstract

Sudden increases in the background gamma-radiation dose may occur due to the removal of 222 Rn and 220 Rn progeny from the atmosphere by wet deposition mechanisms. This contribution has been measured using a Geiger-Muller detector at the Atomic Weapons Establishment (Aldermaston, UK) during July 2005-April 2006. The results are approximated by a log-normal distribution and there were nine separate occurrences of the gamma-radiation dose exceeding 125% of the geometric mean value. The increases were associated with periods of heavy rainfall, although no correlation was evident between the dose rate and the amount of rainfall, as increased rainfall dilutes the activity further rather than increasing its atmospheric removal. The events were preceded by periods of fine weather and atmospheric stability that allow for the build-up of 222 Rn and 220 Rn progeny. Similar increases in gamma-radiation dose have been measured at a nearby monitoring station situated approximately 11 miles from Aldermaston. Increases in gamma-radiation dose during heavy rainfall have also been observed throughout the UK, that followed the trajectory of an air mass. All events decreased to typical values within 1-2 h as the water permeated into the ground below and the radioactivity decayed away.

Formation and Decay of Fluorobenzene Radical Anions Affected by Their Isomeric Structures and the Number of Fluorine Atoms

“…High stability (i.e., long lifetime of radical anions) provides greater opportunity for excess electrons to transfer to the photoacid generator (PAG) and increase the acid generation yield. However, a large amount of fluorine substitution might change the electrostatic interactions at the interface with a silicon wafer or BARC (bottom antireflective coating) layer, 29 as well as the compatibility with the PAG and/or quencher. 30 Incompatibility would cause phase separation in a thin resist film, and thus, a homogeneous lateral distribution of acid would not be guaranteed.…”

Nanopatterning by Laser Interference Lithography: Applications to Optical Devices

“…1(e), is due to the vertical standing waves caused by the reflection from the bare silicon substrate [34]. To prevent generation of undesired patterns, anti-reflective coating is widely used where it controls the reflection of the laser light source at the surface of the substrate [35][36][37][38].…”

Process Technology for Copper Interconnects

“…The trench-first process has a relatively simple etch, but the via lithography is difficult, because a large depth of focus is required to print vias in trenches [16,17,[33][34][35][36]. An organic anti-reflective coating (ARC) is generally used during trench lithography ( Figure 8.6B) [37]. The via-first process is difficult because the SiN or SiCN etch stop layer at the bottom of the via must be preserved during the via etch and trench etch to avoid exposing the underlying Cu to oxidizing resist strip chemistries [34].…”

“…In contrast, for the via-first process, the via lithography is relatively simple, but the trench etch is difficult [33,34]. The organic ARC layer planarizes the topography from the vias, protects the etch stop layer from erosion during the trench etch, and can help prevent resist poisoning, by slowing down amine diffusion in the resist [37][38][39]. An organic anti-reflective coating (ARC) is generally used during trench lithography ( Figure 8.6B) [37].…”