Study of fast-neutron irradiated vitreous silica by positron annihilation methods

Mbungu-Tsumbu,; Segers, D.; Dorikens, M.; Dorikens‐Vanpraet, L.; Laermans, C.; Bosch, A. Van den

doi:10.1016/0022-3093(84)90360-0

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Cited by 5 publications

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“…In this case ion implantation should decrease Ps formation by producing smaller defects and reducing free spaces. 17 Therefore S value in as-implanted samples should decrease as a function of the dose.…”

Section: ͓S0003-6951͑97͒00804-8͔mentioning

confidence: 99%

Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Ghislotti

Nielsen

Asoka‐Kumar

et al. 1997

Applied Physics Letters

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Section: ͓S0003-6951͑97͒00804-8͔mentioning

confidence: 99%

Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Ghislotti

Nielsen

Asoka‐Kumar

et al. 1997

Applied Physics Letters

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Investigation of the “Glassy” Properties of Neutron and Electron Irradiated Crystalline Quartz Related to the Anomalous Low Temperature Dynamics of Non-Crystalline Solids

Laermans¹

1986

Structure and Bonding in Noncrystalline Solids

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Ion implantation induced defects in SiO2: The applicability of the positron probe

Fujinami

Chilton

1993

Applied Physics Letters

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Boron ion implantation-induced defects in SiO2 were investigated using slow positron annihilation spectroscopy and electron spin resonance (ESR). The defects caused by ion implantation are manifest as a particularly low S parameter in the region of the SiO2 layer in which B implantation damage occurs. The annealing behavior of the defect responsible for positron trapping was studied. The defect to which the positron is sensitive is found to be unobservable in ESR measurements. The defect is suggested to be dissolved O2 or a charged Frenkel defect, such as the negative nonbridging-oxygen hole center (≡Si—O−).

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Study of fast-neutron irradiated vitreous silica by positron annihilation methods

Cited by 5 publications

References 13 publications

Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Investigation of the “Glassy” Properties of Neutron and Electron Irradiated Crystalline Quartz Related to the Anomalous Low Temperature Dynamics of Non-Crystalline Solids

Ion implantation induced defects in SiO2: The applicability of the positron probe

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