Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Ghislotti, G.; Nielsen, B.; Asoka‐Kumar, P.; Lynn, K. G.; Mauro, L. F. Di; Corni, Federico; Tonini, Rita

doi:10.1063/1.118315

Cited by 12 publications

(7 citation statements)

References 25 publications

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“…24 Hence, the probability of positron annihilation inside nc-Si is negligible. 25 Nitrogen also prefers to be trapped in these voids, leading to a larger amount of nitrogen incorporated during annealing in nitrogen and, therefore, smaller S values are seen in PAS. The presence of nitrogen in a system of Si clusters embedded in SiO 2 has been identified by x-ray photoelectron spectroscopy.…”

Section: Discussionmentioning

confidence: 99%

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Pi¹,

Coleman²,

Harding³

et al. 2004

Journal of Applied Physics

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Si nanocrystals embedded in thermally grown SiO 2 have been annealed at temperatures between 400 and 900°C in a variety of atmospheres. Positron annihilation spectroscopy has been employed to study changes in the interface regions between nanocrystalline Si ͑nc-Si͒ and SiO 2 with the support of photoluminescence measurements. We find that nitrogen and oxygen are trapped in the voids around nc-Si at low annealing temperatures. High-temperature annealing during the formation of nc-Si causes hydrogen originally residing in the SiO 2 /substrate region to enter the SiO 2 structure. Hydrogen diffuse back to the SiO 2 /substrate region on annealing in vacuum at 400°C because no other impurities block its diffusion channels. At annealing temperatures above 700°C, both nitrogen and oxygen react with nc-Si, resulting in a volume increase. This introduces stress in the SiO 2 matrix, which is relaxed by the shrinkage of its intrinsic open volume. The present data suggest that nitrogen suppresses Si diffusion in SiO 2 , so that the agglomeration of nc-Si is slower during annealing in nitrogen than in oxygen or vacuum.

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Section: Discussionmentioning

confidence: 99%

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Pi¹,

Coleman²,

Harding³

et al. 2004

Journal of Applied Physics

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“…Many authors also observed a red or infrared PL between 1.3 and 1.9 eV after high-temperature annealing of Si-implanted oxides [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. In [27] it was shown, that the observed emission photon energy of Si-implanted oxides could be tuned between 1.4 and 1.8 eV by varying the annealing time in oxygen at 1000 • C. Im et al implanted thermally grown SiO 2 layers with Si at RT and at 400 • C, and found that the implantation at 400 • C increases the intensity of the yellow PL by 50% to 100% [29].…”

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 99%

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

177

119

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The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon dioxide layers were investigated. It was found, that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV (Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV. This PL is compared with that of Ar-implanted silicon dioxide and that of Si-and Ge-rich oxide made by rf magnetron sputtering. Based on PL and PL excitation (PLE) spectra we tentatively interpret the blue-violet PL as due to a T 1 → S 0 transition of the neutral oxygen vacancy typical for Si-rich SiO 2 and similar Ge-or Sn-related defects in Ge-and Sn-implanted silicon dioxide. The differences between Si, Ge and Sn will be explained by means of the heavy atom effect. For Geimplanted silicon dioxide layers a strong electroluminescence (EL) well visible with the naked eye and with a power efficiency up to 5 × 10 −4 was achieved. The EL spectrum correlates very well with the PL one. Whereas the EL intensity shows a linear dependence on the injection current over three orders of magnitude, the shape of the EL spectrum remains unchanged. The I − V dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunnel current in comparison to the unimplanted material. Finally, the suitability of Ge-implanted silicon dioxide layers for optoelectronic applications is briefly discussed. 78.60.F; 78.55; 61.72.T; 85.30.T; 78.66.J Since the early 60s Si has been the dominating material of microelectronics because of its excellent mechanical, chemical and electrical properties. However, with increasing miniaturization one approaches more and more the physical limits drawn by the material properties of Si. The increase of the line resistance and the corresponding parasitic capacitors with decreasing feature size is opposed to a further miniaturization and an enhancement of the clock rate. The PACS:

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“…Fitting et al reported that the NOV showed blue luminescence near 470 nm while the NBOHC showed other emission near 600 nm. 17 The PL band emission around 450 nm can have two possible origins. One is related to diamagnetic defect known as NOV, and the other is associated with quantum confinement effects caused by ∼2 nm Si nanocrystals in the SiO 2 layer.…”

Section: Results and Disussionmentioning

confidence: 99%

Characterization of Implantation Induced Defects in Si-Implanted SiO₂ Film

Zhou¹,

Yu²,

Wang³

et al. 2008

j nanosci nanotechnol

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Si-implanted thermal SiO2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation region of the SiO2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO2 network structure. The presence of blue band emission (430-470 nm) in the implanted SiO2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover the pre-implantation condition after a thermal treatment.

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Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Abstract: Defects in 30 keV Er + -implanted SiO 2 /Si studied by positron annihilation and cathodoluminescence

Cited by 12 publications

References 25 publications

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Characterization of Implantation Induced Defects in Si-Implanted SiO₂ Film

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Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Abstract: Defects in 30 keV Er + -implanted SiO 2 /Si studied by positron annihilation and cathodoluminescence

Cited by 12 publications

References 25 publications

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Characterization of Implantation Induced Defects in Si-Implanted SiO2 Film

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Characterization of Implantation Induced Defects in Si-Implanted SiO₂ Film