Characterization of Implantation Induced Defects in Si-Implanted SiO₂ Film

Abstract

Si-implanted thermal SiO2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation region of the SiO2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO2 network structure. The presence of blue band emission (430-470 nm) in the implanted SiO2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover the pre-implantation condition after a thermal treatment.

Characterisation of Ion Implantation-induced Defects in Certain Technologically Important Materials by Positron Annihilation

“…The interested reader may look into review articles on this subject [31][32] and the references therein. A few references are cited at the end [33][34][35][36][37][38][39][40] .…”