Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films

Nélis, A.; Haye, Emile; Terwagne, G.

doi:10.1016/j.tsf.2022.139135

Cited by 4 publications

(2 citation statements)

References 40 publications

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“…The absorption peak of sulfate is in the range of 1000-1200 cm −1 , and the band at 1100 cm −1 in the infrared spectrum, can be attributed to S-O and sulfate in sulfonic acid group [38]. The absorption peak near 1980 cm −1 is related to the oscillation of Ge-H [39]. From the infrared spectrum of Figure 3, it can be seen that in the sulfuric acid system, germanium in a germanium solution mainly exists in the form of H 2 GeO 3 molecules, and with the germanium solution concentration increased from 50 mg/L to 1 g/L, the relative strength of Ge-O-Ge valence bond increases.…”

Section: Ftir Spectra Analysismentioning

confidence: 92%

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The States and Properties of Germanium in Sulfuric Acid Solution

Song

Liang

et al. 2023

Metals

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In recent years, with the development of science and technology, the strategic position of germanium is becoming more and more important, and the global demand for germanium is also increasing. At present, there is no unified description of the existence form of germanium in solutions. Based on the current mainstream acid leaching process of germanium, this paper studies the existing form and properties of germanium in sulfuric acid solutions. Through the characterization and analysis of Raman, FTIR, and XPS of three concentrations of pure germanium solution, it is clear that germanium mainly exists in the form of H2GeO3 and some Ge4+ in sulfuric acid solution. Through the Tyndall effect and zeta potential, it is determined that H2GeO3 exists in the form of colloid in sulfuric acid solution. With the increase of germanium concentration, H2GeO3 will polymerize in a sulfuric acid solution to form polygermanic acid, and the H2GeO3 colloidal dispersion system becomes more stable. This study clarifies the existing form and properties of germanium in sulfuric acid solution, which is of great significance to the leaching extraction of germanium-containing materials and the development of the germanium industry.

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Section: Ftir Spectra Analysismentioning

confidence: 92%

“…That is, it is easier to form polygermanic acid. In the Fourier Transform infrared spectra, the characteristic peaks corresponding to different germanium-containing functional groups are shown in Table 3 [35,[37][38][39].…”

Section: Ftir Spectra Analysismentioning

confidence: 99%

The States and Properties of Germanium in Sulfuric Acid Solution

Song

Liang

et al. 2023

Metals

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Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Nélis

Chicoine

Schiettekatte

et al. 2023

Nuclear Instruments and Methods in Physics Research Section B:

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18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films

Nélis

Vickridge

Ganem

et al. 2021

Journal of Applied Physics

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We investigate the effects of oxygen on the thermal diffusion of germanium atoms, implanted inside a thermally grown SiO2 layer, during high temperature processes (1100 °C, 60 min). The impact of the presence of oxygen on Ge diffusion is studied as a function of its origin, as it can come either from the annealing atmosphere (extrinsic source) or from the SiO2 matrix itself (intrinsic source). 18O labeling of the oxygen either in the annealing atmosphere or in the silica substrate, together with an isotopically sensitive ion beam analysis, shows a clear oxygen-dependence in germanium diffusion. This is especially so when oxygen is present in the annealing atmosphere, where it is responsible for an enhancement of germanium out-diffusion and redistribution into several peaks during annealing, through the formation of GeO molecules. A new three-process model is proposed to explain the impact of a contaminated atmosphere on the Ge redistribution. This is notably shown that a third Ge peak arises at the sample surface when the annealing atmosphere is contaminated by oxygen. This peak formation is explained by the oxidation of Ge present at the vicinity of the surface by oxygen coming from the annealing atmosphere. This is also shown that O2 molecules can diffuse in depth, with a coefficient of diffusion DO2∼10−9cm2/s, until the densities of Ge and irradiation-induced defects increase, causing the progressive oxidation of Ge in depth and the restoration of the SiO2 stoichiometry.

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Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films

Cited by 4 publications

References 40 publications

The States and Properties of Germanium in Sulfuric Acid Solution

The States and Properties of Germanium in Sulfuric Acid Solution

Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films

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