Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Nélis, A.; Chicoine, M.; Schiettekatte, F.; Terwagne, G.

doi:10.1016/j.nimb.2023.02.019

Cited by 1 publication

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…25−28 The most commonly used approaches for fabricating SiGe nanocrystals on an insulator are chemical vapor deposition (CVD) and ion implantation. 29 Chemical vapor deposition is a thin-film deposition technique that can be used to grow SiGe nanocrystals on an insulator by controlling the atomic composition of the materials deposited by injecting SiH 4 and GeH 4 precursors into the CVD reactor. The precursors react chemically at high temperatures on the insulator surface.…”

Section: ■ Introductionmentioning

confidence: 99%

“…There are different methods for growing SiGe nanocrystals, each offering specific advantages in terms of controlling the composition, size, shape, and distribution of the nanocrystals. Each of these methods has advantages and limitations, depending on the specific application requirements. − The most commonly used approaches for fabricating SiGe nanocrystals on an insulator are chemical vapor deposition (CVD) and ion implantation . Chemical vapor deposition is a thin-film deposition technique that can be used to grow SiGe nanocrystals on an insulator by controlling the atomic composition of the materials deposited by injecting SiH 4 and GeH 4 precursors into the CVD reactor.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Aouassa,

Bouabdellaoui,

Pessoa

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

In this study, we report the growth and characterization of high-quality SiGe/SiO 2 core−shell nanocrystals on an insulator. Our approach involves the solid-state dewetting of a germanium (Ge) film deposited via molecular beam epitaxy on an ultrathin silicon-on-insulator film. The resulting nanocrystals exhibit exceptional uniformity, a well-defined hemispherical shape, and distinct crystallographic facets, as confirmed by rigorous analyses using advanced techniques, such as high-resolution transmission electron microscopy and energy-dispersive spectrometry. Furthermore, we successfully integrated these SiGe/SiO 2 core/shell nanocrystals into a metal−insulator−semiconductor (MIS) structure. Through current−voltage and impedance spectroscopies, we determine the transport and electrical properties of this integrated system. Our measurements reveal the formation of a Schottky diode with high rectifying behavior. Importantly, impedance measurements allow us to elucidate the equivalent circuit of this MIS structure, highlighting the significant influence of the SiGe/SiO 2 core−shell nanocrystals on the electrical transport phenomena within the MIS architecture. These findings represent a significant advancement in the fabrication and characterization of SiGe/SiO 2 core/shell nanocrystals for MIS devices, opening up exciting possibilities for their applications in photovoltaics and photodetection.

show abstract

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Aouassa,

Bouabdellaoui,

Pessoa

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Cited by 1 publication

References 17 publications

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Contact Info

Product

Resources

About

Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Cited by 1 publication

References 17 publications

Growth and Characterization of SiGe/SiO2 Core/Shell Nanocrystals on Insulators

Growth and Characterization of SiGe/SiO2 Core/Shell Nanocrystals on Insulators

Contact Info

Product

Resources

About

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators

Growth and Characterization of SiGe/SiO₂ Core/Shell Nanocrystals on Insulators