Ion implantation induced defects in SiO2: The applicability of the positron probe

Abstract

Boron ion implantation-induced defects in SiO2 were investigated using slow positron annihilation spectroscopy and electron spin resonance (ESR). The defects caused by ion implantation are manifest as a particularly low S parameter in the region of the SiO2 layer in which B implantation damage occurs. The annealing behavior of the defect responsible for positron trapping was studied. The defect to which the positron is sensitive is found to be unobservable in ESR measurements. The defect is suggested to be dissolved O2 or a charged Frenkel defect, such as the negative nonbridging-oxygen hole center (≡Si—O−).

Production of a Positron Microprobe Using a Transmission Remoderator

“…Ion implantation into SiO2 leads to a low S parameter due to suppression of Ps formation. 24 The S parameter profile along the grid pattern in a line scan is shown in Fig. 9.…”

Study of precipitate in Si-rich SiO2 films

“…damaged Si-O bonds and other charge-transfer centres); (b) reduction of the free volume associated to atomic rearrangement (Si cluster formation). The partial recovery of Ps formation after thermal treatments at 500 and 800 8C comes from the annealing of the positron traps (broken bonds and charge-transfer centres in irradiated SiO 2 disappear at 600 8C [9,15]). Moreover, the residual H, which fills cavities that could host Ps, is progressively released during the thermal treatment.…”

Depth Profiling of Defects in He Implanted SiO2

“…Defects evolution with thermal treatments was followed in silicon-rich silicon oxide implanted by argon [19]. Ion implantation induces several type of defects in silicon dioxide [14]. Moreover, the analysis of the positron measurements becomes more complicated due to the formation of Ps in SiO 2 [8,20].…”

“…An energetic particle passing through SiO 2 creates in average an electron-hole pair every 18 eV of deposited energy as a result of the breaking of Si-O bonds [1]. Defects produced by carbon [13], boron [14], silicon [15,16], and xenon [17,18] implantation have been studied in SiO 2 . Defects evolution with thermal treatments was followed in silicon-rich silicon oxide implanted by argon [19].…”