Study of electronic structure of graphite-like carbon nitride

Shimoyama, Iwao; Wu, Guohua; Sekiguchi, Takuya; Baba, Yuji

doi:10.1016/s0368-2048(00)00306-6

Cited by 54 publications

(33 citation statements)

References 12 publications

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“…It is well known that the * features of molecular N 2 and pyridine-like structures usually appear at 401.1 and 398.8 eV, respectively. [27][28][29] Therefore, the position of the A and C features is close to the * features of molecular N 2 and pyridine-like structure, respectively. The most intense A feature reveals that the doped N atoms mainly exist as molecular N 2 .…”

mentioning

confidence: 60%

Experimental and theoretical studies on the structure of N-doped carbon nanotubes: Possibility of intercalated molecular N2

Choi

Bae

Park

et al. 2004

Applied Physics Letters

104

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The concentration distribution and electronic structure of N atoms doped in multiwalled banboo-like carbon nanotubes (CNTs) are examined by photon energy-dependent x-ray photoelectron spectroscopy and x-ray absorption near edge structure. The inner part of the nanotube wall has a higher N concentration and contains molecular N2 presumably intercalated between the graphite layers. These results are supported by the self-consistent charge-density-functional-based tight-binding calculation of double-walled CNTs, showing that the intercalation of N2 is energetically possible and the graphite-like N structure conformer becomes more stable when the inner wall is more heavily doped.

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mentioning

confidence: 60%

Experimental and theoretical studies on the structure of N-doped carbon nanotubes: Possibility of intercalated molecular N2

Choi

Bae

Park

et al. 2004

Applied Physics Letters

104

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“…CN x films may exhibit short-range order (SRO), which is defined by a complex interplay of the sp 3 , sp 2 , and sp hybridized bonds that carbon and nitrogen can form. Depending on the deposition parameters, a variety of CN x microstructures can be formed during thin film synthesis, including amorphous (a-CN x ), 4 graphitelike (g-CN x ), 5 and fullerene-like carbon nitride (FL-CN x ). 6,7 Hard, yet elastic CN x films have been reported to form at elevated temperatures (>350 C), low to medium particle energies, using a wide range of N 2 /Ar flow ratios by both direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS).…”

Section: Introductionmentioning

confidence: 99%

“…The measurements were performed with a 36 MeV 127 I 8þ primary ion beam incident at 67. 5 relative to the surface normal and a recoil angle of 45 . 29,30 All recoil ToF-ERDA spectra were analyzed using the CONTES code, 31 where the measured recoil energy spectrum of each element was converted to relative atomic concentration profiles.…”

mentioning

confidence: 99%

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

Bakoglidis

Schmidt

Garbrecht

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering, Journal of Vacuum Science & Technology. A, 2015, 33(5) The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s ! 60 V, V s ! 100 V, and V s ¼ 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, r, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between À0.4 and À1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to À4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing V s for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CN x films produced by MFMS and DCMS at V s ¼ 100 and 120 V presented a high wear resistance with wear coefficients of k 2.3 Â 10 À5 mm 3 /Nm. While all CN x films exhibit low friction, wear depends strongly on the structural and mechanical characteristics of the films. The MFMS mode is best suited for the production of hard CN x films, although high compressive stresses challenge the application on steel substrates. Films grown in HiPIMS mode provide adequate adhesion due to low residual stress values, at the expense of lower film hardness. Thus, a relatively wide mechanical property envelope is presented for CN x films, ...

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“…It can be deconvoluted into two bands at 399.45 and 400.32 eV, respectively. These bands can be assigned to the graphite-like and pyridinelike N-C structures [26][27][28]. The deconvolution of the XPS spectrum from the C 1s core level is carried out using XPS singles of C-C, C-N, and C-O bonds, the bonding energies of which are 284.60, 285.69 and 288.60 eV, respectively (Fig.…”

Section: Xps and Raman Measurementsmentioning

confidence: 99%

The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature

Jia

Fang

et al. 2016

International Journal of Refractory Metals and Hard Materials

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Study of electronic structure of graphite-like carbon nitride

Cited by 54 publications

References 12 publications

Experimental and theoretical studies on the structure of N-doped carbon nanotubes: Possibility of intercalated molecular N2

Experimental and theoretical studies on the structure of N-doped carbon nanotubes: Possibility of intercalated molecular N2

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature

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