The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature

Bi, Yan; Jia, Xiaopeng; Fang, Chao; Chen, Ning; Li, Yadong; Sun, Shishuai; Ma, Hongan

doi:10.1016/j.ijrmhm.2015.08.009

Cited by 23 publications

(8 citation statements)

References 29 publications

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“…Generally, the characteristic peak of natural diamond is 1331-1346 cm −1 , while the characteristic peak of the theoretically perfect large diamond is 1332.5 cm −1 . [24] In our experiments, the peak position and FWHM for the large diamond without sulfur doped are 133.3 cm −1 and 3.2 cm −1 , respec-tively. The peak is related to many factors, such as the room temperature and the testing lattice perfection of the large diamond.…”

Section: -4mentioning

confidence: 48%

“…It was reported that the C 1s spectra have peaks at 284.60 eV for C-C bonding. [3,24,32] Because the peak at 284.53 eV is extremely close to that at 284.60 eV, it can be attributed to C-C bonding. The spectrum of S 2p (as shown in Fig.…”

Section: Xps Spectra and Raman Spectra Of The Large Diamondsmentioning

confidence: 90%

“…In fact, this method has been used to evaluate the quality of the large diamond single crystal synthesized by the HPHT method. [24] The large diamond FWHM of the Raman peaks is calculated by Gaussian simulation (the Gaussian simulation curve is the closest to the Raman curve). The results of the measurements are shown in Fig.…”

Section: -4mentioning

confidence: 99%

“…Both phosphorus and sulfur are considered as the potential doping elements. [9,10,[21][22][23][24][25][26][27][28] It has been established experimentally that phosphorus-C and sulfur-C systems are able to synthesize diamond at high pressure and high temperature (HPHT). [10,29] Diamonds with sulfur additive exhibiting ntype properties have been produced by chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

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Large single crystal diamond grown in FeNiMnCo–S–C system under high pressure and high temperature conditions

Zhang

et al. 2016

Chinese Phys. B

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Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 • C and pressures of 5.3-5.5 GPa. Because of the presence of sulfur additive, the morphology and color of the large diamond crystals change obviously. The content and shape of inclusions change with increasing sulfur additive. It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive, which results in left down of the V-shape region. The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals. The x-ray photoelectron spectroscopy (XPS) spectra show the presence of S in the diamonds. Furthermore, the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method. When sulfur in the cell of diamond is up to 4.0 wt.%, the resistance of the diamond is 9.628×10 5 Ω•cm. It is shown that the large single crystal samples are n type semiconductors. This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.

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Section: -4mentioning

confidence: 48%

Section: Xps Spectra and Raman Spectra Of The Large Diamondsmentioning

confidence: 90%

Section: -4mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Large single crystal diamond grown in FeNiMnCo–S–C system under high pressure and high temperature conditions

Zhang

et al. 2016

Chinese Phys. B

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“…Raman spectroscopy was used to analyze the residual stress and the quality of diamond crystals [24] . The Raman characteristic peak of the theoretically perfect diamond single crystal is 1332.5 cm -1 [24] . Fig.…”

Section: Raman Spectra Of Cubic Sheet Diamond Crystals Doped Phosphorusmentioning

confidence: 99%

Study on synthesis and electrical properties of slab shape diamond crystals in FeNiMnCo-C-P system under HPHT

Gong

Zhang

et al. 2017

International Journal of Refractory Metals and Hard Materials

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Optimal parameter(s) for the synthesis of nitrogen-vacancy (NV) centres in polycrystalline diamonds at low pressure

Ejalonibu

Sarty

Bradley

2019

J Mater Sci: Mater Electron

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The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature

Cited by 23 publications

References 29 publications

Large single crystal diamond grown in FeNiMnCo–S–C system under high pressure and high temperature conditions

Large single crystal diamond grown in FeNiMnCo–S–C system under high pressure and high temperature conditions

Study on synthesis and electrical properties of slab shape diamond crystals in FeNiMnCo-C-P system under HPHT

Optimal parameter(s) for the synthesis of nitrogen-vacancy (NV) centres in polycrystalline diamonds at low pressure

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