Study of dopant-dependent band gap narrowing in compound semiconductor devices

Palankovski, V.; Kaiblinger-Grujin, G.; Selberherr, S.

doi:10.1016/s0921-5107(99)00118-x

Cited by 50 publications

(35 citation statements)

References 13 publications

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“…The renormalization is found not to exceed 100 meV, for doping concentrations 10 18 -10 19 /cm 3 . This is scaled with the factor ∼1/2 to represent InAs [57] but more than 3/4 of the effect is due to interactions of conduction electrons with ionized donors [58], nonexistent for the 2DEG case. Thus, the many-electron interactions, for the relevant densities, reduce the InAs band gap only by ∼10 meV.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface

et al. 2016

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Two-dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a one-dimensional (1D) self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. Electronic properties of these surfaces are tuned by changing the S coverage, while keeping a high-quality interface, free of defects and with a constant doping density. In contrast to earlier studies we show that the Poisson-Schrödinger scheme predicts the 2DEG band energies correctly but it is indispensable to take into account the existence of the physical surface. The surface substantially influences the band energies beyond simple electrostatics, by setting nontrivial boundary conditions for 2DEG wave functions.

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Section: Theoretical Frameworkmentioning

confidence: 99%

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface

et al. 2016

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“…1 can be used to calculate the band-gap narrowing as a function of the distance from the sample surface. In Figure 9, we have used the Palankovsky et al 32 model to obtain an accurate DE bgn cB profile in which we observe how the fluctuations on the Ti profile affect to the conduction band narrowing. Now, the experimental results described in Section III can be explained.…”

Section: à3mentioning

confidence: 99%

“…At high frequency, signal changes cannot be 2015) followed by tunneling carriers and, so, the loss term and, i.e., the conductance, increase with frequency. As temperature increases, the DE bgn cB value decreases 32 and, at the same time, electrons gain energy transferred from the semiconductor lattice phonons (proportional to kT). These two additive contributions make easier for electrons to overcome the energy barrier.…”

Section: à3mentioning

confidence: 99%

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Perez

Dueñas

Castán

et al. 2015

Journal of Applied Physics

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The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (10 13 cm -2 and 10 14 cm -2 ) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around E c -425 and E c -275 meV for implantation doses of 10 13 cm À2 and 10 14 cm À2, respectively. At low reverse bias voltage, quasi-continuously distributed energy levels between the minimum of the conduction bands, E c and E c -450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known, the Meyer-Neldel rule typically appears in processes involving multiple excitations, like carrier capture and emission in deep levels, and it is generally observed in disordered systems. The obtained Meyer-Neldel energy value, 15.19 meV, is very close to the value obtained in multicrystalline silicon samples contaminated with iron (13.65 meV), meaning that this energy value could be associated to the phonons energy in this kind of substrates. V C 2015 AIP Publishing LLC. [http://dx

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“…Calculated values are listed in Table 2. Small deviation in Tables 1 and 2 results could be related to the dopant dependent band gap narrowing in the PL result [27]. A large shift in the emission wavelength and hence composition between the top InAlAs layers of all the samples has been observed.…”

Section: Resultsmentioning

confidence: 83%

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Kumar

Mukhopadhyay

Bag

et al. 2015

Applied Surface Science

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Study of dopant-dependent band gap narrowing in compound semiconductor devices

Cited by 50 publications

References 13 publications

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

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