Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28 eV below the conduction band for implantation doses in the range 10 13 -10 14 at./cm 2 . For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n þ /n junction. V C 2013 American Institute of Physics. [http://dx

In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.

A new determination of the molar gas constant was performed from measurements of the speed of sound in argon at the triple point of water and extrapolation to zero pressure. A new resonant cavity was used. This is a triaxial ellipsoid whose walls are gold-coated steel and which is divided into two identical halves that are bolted and sealed with an O-ring. Microwave and electroacoustic traducers are located in the northern and southern parts of the cavity, respectively, so that measurements of microwave and acoustic frequencies are carried out in the same experiment. Measurements were taken at pressures from 600 kPa to 60 kPa and at 273.16 K. The internal equivalent radius of the cavity was accurately determined by microwave measurements and the first four radial symmetric acoustic modes were simultaneously measured and used to calculate the speed of sound. The improvements made using the new cavity have reduced by half the main contributions to the uncertainty due to the radius determination using microwave measurements which amounts to 4.7 parts in 10 6 and the acoustic measurements, 4.4 parts in 10 6 , where the main contribution (3.7 parts in 10 6) is the relative excess half-widths associated with the limit of our acoustic model, compared with our previous measurements. As a result of all the improvements with the new cavity and the measurements performed, we determined the molar gas constant R = (8.314449  0.000056) J•K-1 •mol-1 which corresponds to a relative standard uncertainty of 6.7 parts in 10 6. The value reported in this paper lies-1.3 parts 2 in 10 6 below the recommended value of CODATA 2014, although still within the range consistent with it.

The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (10 13 cm -2 and 10 14 cm -2 ) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around E c -425 and E c -275 meV for implantation doses of 10 13 cm À2 and 10 14 cm À2, respectively. At low reverse bias voltage, quasi-continuously distributed energy levels between the minimum of the conduction bands, E c and E c -450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known, the Meyer-Neldel rule typically appears in processes involving multiple excitations, like carrier capture and emission in deep levels, and it is generally observed in disordered systems. The obtained Meyer-Neldel energy value, 15.19 meV, is very close to the value obtained in multicrystalline silicon samples contaminated with iron (13.65 meV), meaning that this energy value could be associated to the phonons energy in this kind of substrates. V C 2015 AIP Publishing LLC. [http://dx

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