Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Piao, Guilin; Ikenaga, Kazutada; Yano, Yoshiki; Tokunaga, Hitoo; Mishima, Akira; Ban, Yuzaburo; Tabuchi, Toshiya; Matsumoto, Koh

doi:10.1016/j.jcrysgro.2016.08.030

Cited by 57 publications

(50 citation statements)

References 11 publications

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“…Studies in the literature often plot carbon concentration versus input V/III ratio [16,17,18]. This type of plot is presented in Figure 4a for the samples considered in this study.…”

Section: Resultsmentioning

confidence: 99%

“…Note the much tighter grouping of carbon concentration values in Figure 4b for samples considered in this study. Also included in Figure 4b are data from the literature [7,16,17,18], for cases in which input NH 3 molar flow and growth rate were reported. The data from Piao et al [16] are in good agreement with findings from the present work, despite differences in reactor design and reactor pressure (atmospheric vs. 200 mbar).…”

Section: Resultsmentioning

confidence: 99%

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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

et al. 2019

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Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in several cases, identical growths were performed on GaN-on-Al2O3 templates for comparison purposes). Growth conditions with different growth efficiencies but identical ammonia molar flows, when normalized for growth rate, resulted in identical carbon incorporation. It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation. Carbon incorporation was found to decrease proportionally with increasing ammonia molar flow, when normalized for growth rate. Ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio. A low carbon concentration of 7.3 × 1014 atoms/cm3 (prepared at a growth rate of 0.57 µm/h) was obtained by optimizing growth conditions for GaN grown on pseudo-bulk GaN substrates.

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“…Studies in the literature often plot carbon concentration versus input V/III ratio [16,17,18]. This type of plot is presented in Figure 4a for the samples considered in this study.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

et al. 2019

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“…The concentration of dopants at the level of 10 20 at/cm 3 with 10% activation of acceptors using the CBr 4 precursor in the PA-MBE method was reported [92]. However, for the MOCVD growth method, the literature was focused on controlling unintentional carbon incorporated during GaN layer growth, because of carbon-contained organometallic precursors [93][94][95].…”

Section: Carbon Properties In Ganmentioning

confidence: 99%

“…Two times lower detection limit was achieved by the Evans Analytical Group (EAG) [107] at the studies of carbon precursors for GaN doping in chemical vapor deposition growth method. The lowest detection limit of carbon in GaN of 10 15 at/cm 3 was obtained by [94], but the measurement conditions were not described. The SIMS measurement of gallium nitride grown by hydride vapor phase epitaxy (HVPE) allow receiving the carbon detection limit at the level of 5 × 10 15 at/cm 3 [108][109][110].…”

Section: Sims Measurement Of Carbonmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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“…In this respect, residual impurity in the epitaxial layer should be minimized. Among various impurities, elimination of carbon residual impurity is the most important issue to achieve a low carrier concentration in a metal‐organic chemical vapor deposition (MOCVD) . This is because carbon atoms behave deep acceptors, which act as carrier compensation centers.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

Yamada

Chonan²,

Takahashi³

et al. 2017

Physica Status Solidi (a)

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The electrical properties of un-doped and lightly Si-doped GaN grown on cand m-plane GaN substrates by metal organic chemical vapor deposition are investigated. The step-flow growth modes are realized for c-and m-plane GaN epitaxial layer. The carbon contamination in the c-plane GaN and mplane GaN, grown at 1120 C and V/III ¼ 1000, are found to be 1.4 Â 10 16 cm À3 and 5.0 Â 10 15 cm À3 , respectively. The m-plane GaN follows a linear correlation between the carrier concentration and the Si atomic concentration. The Ni/n-GaN (Si; 1 Â 10 16 cm À3 ) Schottky vertical diodes on the c-and m-plane GaN substrates reveal that the reverse current-voltage (I-V) curves are fitted by using the thermionic field emission model under the measured carrier concentration and the Schottky barrier height. The leakage current of the m-plane GaN is three orders of magnitude larger than the c-plane GaN, mostly due to the difference in the Schottky barrier height. status solidi physica a Schottky Diodes www.pss-a.com

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Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Cited by 57 publications

References 11 publications

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

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