Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency

King, Richard R.; Sinton, Ronald A.; Swanson, R.M.

doi:10.1109/16.46368

Cited by 210 publications

(96 citation statements)

References 13 publications

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“…Therefore, there has been much interest in alternative oxidation methods. Several chemical vapor deposition (CVD) methods have been employed, such as plasma-enhanced CVD (PECVD) [2], atmospheric-pressure CVD (APCVD) [3], photochemical CVD [2] and an expandable thermal plasma technique [4]. In the case of PECVD SiO 2 , an SRV in the range of 500-1300 cm/s was attained on 3-Ω · cm n-type silicon (after a 30-min forming-gas anneal (FGA) at 300-400…”

Section: Introductionmentioning

confidence: 99%

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Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

Grant

McIntosh

2010

IEEE Electron Device Lett.

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Abstract-This letter investigates silicon dioxide (SiO 2 ) layers that are electrochemically grown in nitric acid (HNO 3 ) at room temperature. It examines the dependence of surface recombination velocity (SRV), oxide charge, interface states, and oxide thickness on the concentration of HNO 3 . The results show that an SRV of less than 40 cm/s can be attained after SiO 2 is annealed at 400• C in oxygen first and then forming gas. This SRV is similar to that attained by the best thermal oxides. Photoconductance and capacitance-voltage measurements indicate that the low SRV is caused by a large positive charge rather than a low interface state density. The SRV is found to degrade due to a decrease in charge and an increase in interface states, where the rate depends on the HNO 3 concentration in which the SiO 2 layer was grown.

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Section: Introductionmentioning

confidence: 99%

“…• C) [2], and even higher SRVs (i.e., poorer) were reported for APCVD SiO 2 [5], unless annealed at high temperature (1000 • C), in which case the SRV can be reduced to ∼50 cm/s [3].…”

Section: Introductionmentioning

confidence: 99%

Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

Grant

McIntosh

2010

IEEE Electron Device Lett.

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“…Shabani et al reported a decrement of the bulk Cu concentration by several orders of magnitude after diffusing heavily doped emitters with peak phosphorus concentration up to ∼8 × 10 21 cm 3 and subjecting the samples to various gettering anneals. 3,12 However, in state-of-the-art solar cells, it has become desirable to reduce the doping level of the emitter 13 because excessive dopant concentrations lead to the formation of an electrically inactive layer (often called "dead layer"), 14 emitter saturation current and Auger recombination, 16,17 with negative implications on the maximum achievable conversion efficiency. On the other hand, the choice of light emitter doping also weakens the driving force for the segregation of metallic impurities to the phosphorus-doped region, such that the benefits arising from light doping may be counterbalanced by the incomplete gettering of several metallic impurities, including Cu, as indicated by recent observations of Cu-related LID in industrial silicon solar cells.…”

Section: Introductionmentioning

confidence: 99%

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

et al. 2018

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The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

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“…Because the diffusion profile of the dopants is dependent on the surface morphology, a nanostructured device tends to have a much deeper junction depth with a higher concentration compared with a planar device 26,28 . It leads to severe Auger and surface recombination of charge carriers 29 . Another problem of nanostructured Si solar cells is the increased surface area.…”

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confidence: 99%

All-back-contact ultra-thin silicon nanocone solar cells with 13.7% power conversion efficiency

2013

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Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency

Cited by 210 publications

References 13 publications

Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

All-back-contact ultra-thin silicon nanocone solar cells with 13.7% power conversion efficiency

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