2010
DOI: 10.1016/j.susc.2010.03.002
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Structure of ultra-thin Ti film on the Al(001) surface

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Cited by 7 publications
(4 citation statements)
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“…This is consistent with the measurements using ion scattering spectroscopy 24,25 and low-energy electron diffraction (LEED). 25,26 Although subsurface Ti was found favorable in a previous calculation for a 0.5 ML coverage of Ti on Al(100), 21 the single layer geometry considered in Ref. 21 has a higher energy than the alloy configurations with a local TiAl 3 arrangement as studied in the present work.…”
Section: Calculational Detailssupporting
confidence: 90%
“…This is consistent with the measurements using ion scattering spectroscopy 24,25 and low-energy electron diffraction (LEED). 25,26 Although subsurface Ti was found favorable in a previous calculation for a 0.5 ML coverage of Ti on Al(100), 21 the single layer geometry considered in Ref. 21 has a higher energy than the alloy configurations with a local TiAl 3 arrangement as studied in the present work.…”
Section: Calculational Detailssupporting
confidence: 90%
“…As the Ti coverage increases, LEIS polar-angle scans indicate that the top three Al layers are populated by Ti atoms. 54 Other studies of epitaxial growth of Ti on Al(110) and on Al(001) using Auger electron spectroscopy (AES) and quantitative low energy electron diffraction (QLEED) again indicate that the Ti atoms reside in the second layer of the substrate. 56 Theoretical calculations have also shown that it is energetically more favorable for Ti to be located below the top surface layer.…”
Section: Discussionmentioning
confidence: 98%
“…This observation is also consistent with the fact that no island formation as has been observed in previous STM studies performed at 300 K. 53 Experimental Rutherford backscattering measurements have in fact shown that Ti deposited on Al(100) tends to diffuse into the Al lattice upon heating. 54,55 Structural studies performed using low-energy electron diffraction (LEED) and low-energy ion scattering (LEIS), after submonolayer Ti deposition on Al(001) surfaces at room temperature have shown 54 that for low Ti coverages on Al(100), it is energetically more favorable for Ti atoms to substitutionally replace subsurface Al atoms in every other site. As the Ti coverage increases, LEIS polar-angle scans indicate that the top three Al layers are populated by Ti atoms.…”
Section: Discussionmentioning
confidence: 99%
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