2001
DOI: 10.1103/physrevb.63.115414
|View full text |Cite
|
Sign up to set email alerts
|

Structure of Si atomic chains grown on the Si/Cu(110)c(2×2)surface alloy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

4
22
0

Year Published

2004
2004
2017
2017

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(28 citation statements)
references
References 17 publications
4
22
0
Order By: Relevance
“…On these rows, the corrugation amplitude is close to 0.02±0.01nm as shown on the line scan reported on figure 5. This weak corrugation suggests that the atoms inducing the ( 3 3) 30 R ×°superstructure, are inserted in the plane of the topmost layer forming a 2D surface alloy (2D silicide) as it is generally observed on similar systems [36,37].…”
Section: Resultsmentioning
confidence: 74%
“…On these rows, the corrugation amplitude is close to 0.02±0.01nm as shown on the line scan reported on figure 5. This weak corrugation suggests that the atoms inducing the ( 3 3) 30 R ×°superstructure, are inserted in the plane of the topmost layer forming a 2D surface alloy (2D silicide) as it is generally observed on similar systems [36,37].…”
Section: Resultsmentioning
confidence: 74%
“…This is especially true for non-reactive metal-semiconductor systems, i.e., systems which present a strong trend toward phase separation. Instead, when the trend is toward order, one generally observes the formation of surface alloys, silicide or germanide like, even though some times new interesting superstructures are also observed [7][8][9].…”
Section: Introductionmentioning
confidence: 94%
“…3(c)), as well as with scanning tunnelling spectroscopy (STS) measurements (not shown here) performed on individual NWs: the I(V) spectra (tunnelling current versus sample-to-tip voltage) do not significantly deviate from those performed on the pristine Ag surface. This metallic character could be a proximity effect due metal-induced gap states, or be analogous to the 2D surface alloy initially formed by Si on Cu(1 1 0), or rather be the consequence of the stabilisation of a high-pressure silicon phase, as mentioned above [31,23,26].…”
mentioning
confidence: 97%
“…However, conversely, only very few studies concern the reverse silicon-on-metal systems. Two investigations concern gold and copper noble metal substrates [22,23]. In the last case, short atomic silicon chains, albeit presenting many defects, and displaying no localized electronic states, could be grown on top of an initial 2D surface alloy by depositing silicon onto clean Cu(1 1 0) surfaces.…”
mentioning
confidence: 99%