Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces

Miyazaki, Seiichi; Nishimura, Hiromichí; Fukuda, M.; Ley, L.; Ristein, J.

doi:10.1016/s0169-4332(96)00805-7

Cited by 203 publications

(118 citation statements)

References 9 publications

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“…to a good approximation to the band-gap energy. [17] In this context, the Al 2 O 3 -band gap was measured to be 6.2 and 6.8 eV for 8 and 5 nm thick Al 2 O 3 respectively, in the case of as-deposited sample and 6.3 eV for the annealed ones (not shown) in good agreement with the literature. [18] The Al 2p (Fig.…”

Section: Methodssupporting

confidence: 88%

Interfacial studies of Al₂O₃ deposited on 4H‐SiC(0001)

Diplas

Avice

Thøgersen

et al. 2008

Surface & Interface Analysis

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Al 2 O 3 films deposited on 4H-SiC(0001) by atomic layer deposition (ALD) were characterized by XPS, and high-resolution transmission electron microscopy (HRTEM). The effect of medium and high temperature (873, 1273 K) annealing on samples with oxide thicknesses of 5-8 and 100-120 nm was studied. XPS indicated the presence of a thin (∼1 nm) SiO x layer on the as-grown samples which increased to ∼3 nm after annealing above crystallization temperature (1273 K) in Ar atmosphere. Upon annealing the stoichiometry of the interfacial oxide approaches that of SiO 2 . HRTEM showed that the thickness of the interfacial oxide formed after annealing at 1273 K was not uniform. No significant increase in the thickness of the interfacial oxide, was observed after annealing at 873 K in a N 2 (90%)/H 2 (10%) atmosphere.

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Section: Methodssupporting

confidence: 88%

Interfacial studies of Al₂O₃ deposited on 4H‐SiC(0001)

Diplas

Avice

Thøgersen

et al. 2008

Surface & Interface Analysis

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“…FTIR spectra are represented in Fig is proportional to the SiO 2 thickness [25], so the area of this peak between ~950 cm -1 and ~1020 cm -1 can be used as a qualitative estimation of the SiO x interface layer thickness [26]. The shift towards lower wavenumber with respect to the ideal SiO 2 band is related 6 to the fact that the interface consists of Si suboxide and/or a stressed interfacial layer [23].…”

Section: Resultsmentioning

confidence: 99%

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

et al. 2015

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“…This is true because it is known that the viscous flow of the silica network starts in this temperature regime. 56,57 Certainly, the surface process ͑b͒ is of particular importance for the preparation of flat silica surfaces with a homogeneous thickness because it results in the completion of early silica monolayers at the cost of higher film levels. These results suggest that a Frank-van der Merwe growth mode is thermodynamically favored in the studied thickness range of the silica epilayer.…”

Section: Discussionmentioning

confidence: 99%

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

et al. 2002

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Ultrathin crystalline silica layers grown on a Mo͑112͒ substrate have been shown to be a useful silica model oxide support in surface science model catalyst studies. As the oxide support material plays an important role in the catalytic process, a multitechnique surface science study is presented to characterize the morphological and electronic properties of the heteroepitaxial system SiO 2 /Mo(112). The long-range order of the silica epilayer which grows commensurate with a c(2ϫ2) surface unit mesh on the Mo͑112͒ substrate is studied by low-energy electron diffraction ͑LEED͒. The defect structure of the silica epilayer is characterized in a spot profile analysis ͑SPA͒-LEED study. Antiphase domain boundaries split the silica epilayer into an array of silica crystal grains whose average size and shape is determined. Aiming to prepare flat silica surfaces, the change in the surface roughness with progress in the film preparation is monitored in a combined SPA-LEED and scanning tunneling microscopy ͑STM͒ study and seen to influence also the Si-O stretching frequency in the infrared-reflection-absorption spectroscopy spectra. In STM images of the final silica film an average surface roughness of about 1 Å is detected. It is possible to visualize the silica film unit cell periodicity. A combined anger electron spectroscopy and ultraviolet photoelectron spectroscopy valence band study confirms the silica film stoichiometry and the growth of a 4:2 coordinated silica polymorph on the Mo͑112͒ surface. These various surface science studies allow us to propose models for the growth and structure of the silica epilayer on the Mo͑112͒ surface.

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Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces

Cited by 203 publications

References 9 publications

Interfacial studies of Al₂O₃ deposited on 4H‐SiC(0001)

Interfacial studies of Al₂O₃ deposited on 4H‐SiC(0001)

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

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Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces

Cited by 203 publications

References 9 publications

Interfacial studies of Al2O3 deposited on 4H‐SiC(0001)

Interfacial studies of Al2O3 deposited on 4H‐SiC(0001)

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

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Product

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Interfacial studies of Al₂O₃ deposited on 4H‐SiC(0001)

Interfacial studies of Al₂O₃ deposited on 4H‐SiC(0001)