Structural, optical and photoconducting properties of sprayed CdSe films

Raturi, Atul K.; Thangaraj, R.; Sharma, Anurag; Tripathi, B. B.; Agnihotri, O.P.

doi:10.1016/0040-6090(82)90123-7

Cited by 40 publications

(22 citation statements)

References 15 publications

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“…Table 1 gives the peak positions and intensities resulting from the profile analysis of the diffraction data set after annealing at 773 K. From this table we can see the excellent agreement between the observed peak positions and those corresponding to ICDD cards. The results of the qualitative and quantitative analysis are given in table (2). No binary oxide was found in the oxidation products which implies that an increase in the sample weight should be found upon oxidation, in accordance with results obtained by Gunchenko, et al [6].…”

Section: X-ray Phase Analysissupporting

confidence: 88%

“…But heating up such chalcogenides in air may change their properties due to the reaction with atmospheric gases, especially oxygen. Oxygen chemisorption was reported as the main cause for the unexpected discrepancies obtained in the photoconducting and optical properties of CdS and CdS x Se 1-x [1], CdSe [2], PbTe [3] and ZnSe [4]. At high temperatures, these chalcogenides undergo oxidation in air and it is therefore necessary to know the range of marked oxidation and to get a quantitative picture of the thermally grown oxides.…”

Section: Introductionmentioning

confidence: 99%

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X‐ray structural phase analysis of CdTe semiconductor annealed in air

Heiba

2003

Cryst. Res. Technol.

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Key words cadmium chalcogenides, semiconductor oxidation, X-ray quantitative analysis. PACS 61.10.Eq X-ray structural phase analysis of CdTe semiconductor, thermally annealed in air at temperature range 373-773 K and annealing time 24 hrs, is investigated applying Rietveld method. The results showed that at low temperatures < 523 K, oxygen diffuses into the (½½½) interstitial sites of the CdTe lattice and its relative occupancy increases with the annealing temperature. For higher temperatures ≥ 523 K, the thermally grown oxide CdTeO 3 phase is developed on expense of CdTe phase. The percentage phase abundance of each phase is determined at each temperature applying a standardless method. The rate of oxidation with temperature is found to be non-linear.

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Section: X-ray Phase Analysissupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

X‐ray structural phase analysis of CdTe semiconductor annealed in air

Heiba

2003

Cryst. Res. Technol.

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“…1D, exhibiting two distinct regimes with the transition intensity of Ϸ2mW/cm 2 . This nonlinear photoresponse has also been reported in other NW photodetectors, and has been attributed to the charge-trapping and recombination processes due to the dominant surface states in the forbidden gap of NWs (35,36).…”

Section: Resultsmentioning

confidence: 92%

“…The photocurrent gain in our NW devices is comparable to the best reported values in literature for physical vapor-deposited CdSe thin films. However, for such thin-film devices, the exact gain (ranging from 10 to 1,000 times for Ϸ80 mW/cm 2 illumination) is shown to highly depend on the annealing and deposition temperature conditions that effectively control the film stoichiometry, morphology, and crystallinity (35). In distinct contrast, NWs are single crystalline with controlled composition, and require only ambient temperature processing for their deposition (i.e., assembly) on substrates, making them highly compatible with a wide range of substrates, including plastics and papers.…”

Section: Resultsmentioning

confidence: 99%

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Fan

Jacobson

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

239

235

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We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of Ϸ80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 ؋ 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.nanomaterials ͉ printable electronics ͉ devices ͉ transistors ͉ imager C hemically derived, synthetic nanomaterials with low dimensionality and well defined atomic composition present a unique route toward miniaturization of electronic and sensor components while enhancing their performance and functionality (1-5). To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts. For instance, downscaling of the active sensing material to the nanoscale regime has been shown to enhance the sensitivity of chemical, biological, and optical sensors by orders of magnitude (21-26). To enable the implementation of nanosensors for various technological applications, on-chip integration with electronics is needed to enable automated and accurate processing of the signal. Here, we demonstrate an all-integrated, heterogeneous nanowire (NW) circuitry, capable of detecting and amplifying an optical signal with high sensitivity and responsivity. By implementing our recently developed contact printing technology (29, 30), large arrays of optically active CdSe NWs and high-mobility core/shell Ge/Si NWs are assembled at well defined locations on substrates, and configured as integrated sensor and electronic active components of an all-nanowire circuitry with image-sensing capability. Results and DiscussionIn this work, direct band gap CdSe NWs were used as a model system for the optical sensor elements, capable of detecting visible light with high sensitivity. CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electric...

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“…As a semiconductor, cadmium selenide has ntype conductivity with a band gap of 1.74 eV 19 . The photosensitivity of cadmium selenide is responsible for its application in the production of optoelectronic devices such as photo electrochemical (PEC) cells 20,21 , photoconductors, thin film transistors and gamma ray detectors etc 22,23 . Cadmium phosphide is an n-type semiconductor with a band gap of ~ 1.2 eV 24 which can be used in optoelectronics 25 , quantum electronics 26 and shows promise for thermo photovoltaic devices 27 .…”

Section: Pr2p(e)np(e')mentioning

confidence: 99%

Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new ⁱPr₂N₂P₃⁺ ion supported by combined DFT and mass spectrometric studies

et al. 2016

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Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SeP i Pr2)2N]2 is shown to deposit cadmium selenide and/or cadmium phosphide on glass substrates, dependent upon the growth conditions. The phase, structure, morphology and composition of the films were characterised by X-ray powder diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. The XRD indicated an hexagonal phase for cadmium selenide, whilst cadmium phosphide was monoclinic. Pyrolysis gas chromatography-mass spectrometer and density functional theory were used to deduce a breakdown mechanism for the deposition that favoured the formation of a new aromatic i Pr2N2P3 + ion.

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Structural, optical and photoconducting properties of sprayed CdSe films

Cited by 40 publications

References 15 publications

X‐ray structural phase analysis of CdTe semiconductor annealed in air

X‐ray structural phase analysis of CdTe semiconductor annealed in air

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new ⁱPr₂N₂P₃⁺ ion supported by combined DFT and mass spectrometric studies

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Structural, optical and photoconducting properties of sprayed CdSe films

Cited by 40 publications

References 15 publications

X‐ray structural phase analysis of CdTe semiconductor annealed in air

X‐ray structural phase analysis of CdTe semiconductor annealed in air

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new iPr2N2P3+ ion supported by combined DFT and mass spectrometric studies

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Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new ⁱPr₂N₂P₃⁺ ion supported by combined DFT and mass spectrometric studies