X‐ray structural phase analysis of CdTe semiconductor annealed in air

Abstract

Key words cadmium chalcogenides, semiconductor oxidation, X-ray quantitative analysis. PACS 61.10.Eq X-ray structural phase analysis of CdTe semiconductor, thermally annealed in air at temperature range 373-773 K and annealing time 24 hrs, is investigated applying Rietveld method. The results showed that at low temperatures < 523 K, oxygen diffuses into the (½½½) interstitial sites of the CdTe lattice and its relative occupancy increases with the annealing temperature. For higher temperatures ≥ 523 K, the thermally grown oxide CdTeO 3 phase is developed on expense of CdTe phase. The percentage phase abundance of each phase is determined at each temperature applying a standardless method. The rate of oxidation with temperature is found to be non-linear.

Microwave studies on the dielectric properties of Sm3+ and Sm3+/CdTe doped sol–gel silica glasses

“…(a and b) show the variation of imaginary part of complex Permittivity (ε r ) with frequency at four different temperatures for sample 1 and sample 2, respectively. [16][17][18]. This result is expected as the sample was air annealed.…”

Electronic structure of crystalline binary and ternaryCd−Te−Ocompounds

“…Native oxides have also been identified on CdTe surfaces. 14,15,16,17,18 However, given the difficulties produced by its amorphous structure, the structural and electronic properties of these materials are mostly unknown. Even the nature of oxides in CdTe surfaces is still a subject of controversy.…”

Electronic structure of binary and ternary components of CdTe:O thin films

“…The cubic phase has also been reported in oxidized CdTe surfaces [18,4,7,19]. The crystalline structure has been totally determined for only one monoclinic phase [16].…”