Microwave studies on the dielectric properties of Sm3+ and Sm3+/CdTe doped sol–gel silica glasses

Mathew, Sheena; Rejikumar, P.R.; Yohannan, Jaimon; Mathew, K. T.; Unnikrishnan, N.V.

doi:10.1016/j.jallcom.2007.09.113

Cited by 15 publications

(9 citation statements)

References 16 publications

(12 reference statements)

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“…Numerous synthesis routes are conducted to integrate semiconductor compounds in a host matrix, thus sol-gel method emerge as an attractive alternative to obtain vitreous matrices doped with II-VI semiconductor nanoparticles [10][11][12][13]. This method and spin-coating technique offer important advantages in comparison with classical solid-state synthetic routes, such as mild synthetic conditions, better control of the chemical composition, high homogeneity and purity of the final material and low process temperature, which are the fundamentals for the development of new advanced materials [14].…”

Section: Introductionmentioning

confidence: 99%

CdSe/ZnS-doped silicophosphate films prepared by sol–gel method

Elisa

Vasiliu

Feraru

et al. 2015

J Sol-Gel Sci Technol

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Silicate and silicophosphate films doped with CdSe/ZnS quantum dots (QDs) have been deposited on silicon substrate, by sol-gel method, spin-coating technique. A precursor solution (PS) composed of tetraethoxysilane (TEOS) and ethanol (EtOH) has been prepared in the case of silicate films (T) and in the case of silicophosphate films (TPT), the same precursors for T films and triethylphosphate were used. In each PS, dimethylformamide and CdSe/ZnS (QD) were added. Spectroscopic ellipsometry shows that absorption of TPT films in the visible (400-700 nm) decreases over 400 nm, due to dimensional quantum effect of semiconductor doping particles embedded in the silicophosphate matrix. The same manner is noticed in the case of refractive index dependency on wavelength. Raman spectra were recorded by 785 nm excitation and put in evidence specific bands for the inorganic matrix as well as a low-intensity band characteristic for CdSe doping. The morphology of the films was investigated by transmission electron microscopy revealing semiconductor doping dots with average dimension 3.3 nm and a homogeneous distribution of the doping particles in the inorganic matrix. SEM image of the cross-section of the TPT film reveals a thickness of about 500 nm. The fluorescence spectra of CdSe/ZnSdoped films exhibit an emission band at about 530 nm, provided by 350 nm excitation, whose characteristics are close to those of CdSe compound.

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Section: Introductionmentioning

confidence: 99%

CdSe/ZnS-doped silicophosphate films prepared by sol–gel method

Elisa

Vasiliu

Feraru

et al. 2015

J Sol-Gel Sci Technol

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“…More importantly, electromagnetic radiation is harmful to human health [3]. Therefore, electromagnetic compatibility and electromagnetic interference (EMI) shielding technology are getting more and more attention of the researchers [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic interference shielding effectiveness of aluminum foams with different porosity

Hai

2014

Journal of Alloys and Compounds

115

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“…The sol-gel process for the preparation of glasses and ceramics has attracted increasing scientific and technological interest [1]. Tellurite materials have been studied for some years due to high refractive index (in the range from 1.85 to 2.2), high non-linear third order optical susceptibility (50 times higher than one of SiO 2 systems), high transmittance from ultraviolet to near infrared, low glass transition temperature and electrical semiconductivity [2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%