Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Abstract

We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of Ϸ80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 ؋ 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.nanomaterials ͉ printable electronics ͉ devices ͉ transistors ͉ imager C hemically derived, synthetic nanomaterials with low dimensionality and well defined atomic composition present a unique route toward miniaturization of electronic and sensor components while enhancing their performance and functionality (1-5). To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts. For instance, downscaling of the active sensing material to the nanoscale regime has been shown to enhance the sensitivity of chemical, biological, and optical sensors by orders of magnitude (21-26). To enable the implementation of nanosensors for various technological applications, on-chip integration with electronics is needed to enable automated and accurate processing of the signal. Here, we demonstrate an all-integrated, heterogeneous nanowire (NW) circuitry, capable of detecting and amplifying an optical signal with high sensitivity and responsivity. By implementing our recently developed contact printing technology (29, 30), large arrays of optically active CdSe NWs and high-mobility core/shell Ge/Si NWs are assembled at well defined locations on substrates, and configured as integrated sensor and electronic active components of an all-nanowire circuitry with image-sensing capability. Results and DiscussionIn this work, direct band gap CdSe NWs were used as a model system for the optical sensor elements, capable of detecting visible light with high sensitivity. CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electric...

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics

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Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

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Solution-processed, high-performance n-channel organic microwire transistors

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