Structural, morphological, optical, and photoluminescence properties of nanocrystalline PbS thin films grown by chemical bath deposition

Rajathi, S.; Kirubavathi, K.; Selvaraju, K.

doi:10.1016/j.arabjc.2014.11.057

Cited by 34 publications

(15 citation statements)

References 38 publications

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“…The peaks at about 2350-2360 cm -1 are due to the asymmetric stretching of carbon dioxide in the air [44]. The absorption peak at 1630 cm -1 is assigned to N-H bond [29,35]. C-H streching peak is observed at 1382 cm -1 [35,45,46].…”

Section: Resultsmentioning

confidence: 98%

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

Kul¹

2019

Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi - B Teorik Bilimler

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PbS film has been produced by chemical bath deposition (CBD) method onto glass substrates using aqueous solution containing Pb(NO3)2, Na2SO3, NaOH and SC(NH2)2. The deposition was carried out at room temperature of 26°C and a stirring speed of 60 rpm for an hour. The PbS film has been characterized by x-ray diffraction, field emission scanning electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and optical absorption spectroscopy techniques. The PbS film is polycrystalline face centered cubic phase having randomly preferential orientation in the [101], [200], [220] and [400] directions. The texture coefficient, lattice parameter, strain, crystallite size, and dislocation density were estimated from x-ray diffraction results. Fourier transform infrared result reveals that the presence of PbS and various functional groups in PbS sample. Raman spectrum of the sample shows PbS phase and lead oxysulfates. The optical band gap of the PbS film has been studied using the optical absorbance measurement as a function of wavelength between 200 and 2750 nm. The optical direct band gap of the sample is calculated to be 1.28 eV. The optical band gap of PbS sample exhibited a blue-shift compared with that of bulk PbS.

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Section: Resultsmentioning

confidence: 98%

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

Kul¹

2019

Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi - B Teorik Bilimler

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“…The sizes of the crystallites in all the cases are found to be in nano range (5-35 nm) and these nanocrystallites explain that the SnS 2 thin films have larger nucleation rate than the growth rate due to more number of nucleation centers that exist on the substrate surface [29]. The size of the SnS 2 crystallites found to increase from 5 nm to 35 nm with the increase in precursor concentration from 0.05 to 0.2 M. The increase in crystallite size may be attributed to the improvement of the crystallinity and an increase in the cluster formation owing to increase of precursor concentration leading to agglomeration of small crystallites.…”

Section: Structural Studiesmentioning

confidence: 92%

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

Anitha¹,

Anitha²,

Mohamed³

et al. 2018

Journal of Asian Ceramic Societies

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Tin disulfide thin films were prepared with different molarities of tin species (M Sn ) at the optimized substrate temperature using the Nebulized Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin IV chloride Penta hydrate precursor is varied from 0.05:0.4 to 0.25:0.4 (SnCl 4 .5H 2 O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS 2 thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS 2 thin films with (001) crystallite orientation. On increasing the concentration, the multi-phases (SnS and Sn 2 S 3 ) were found to be present along with SnS 2 material. The platelet-like grains were observed from SEM analysis in these SnS 2 films. Multiple interference effects were predominant in all these thin films in the wavelength region of 600-1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.2 eV to 2.75 eV with an increase in M Sn from 0.05 to 0.2 M, respectively, and further increased to 3.0 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of n-type. A minimum resistivity value of 2.19 × 10 3 Ω cm was obtained for the film grown at M Sn = 0.2 M.ARTICLE HISTORY

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“…Hence, its optical band gap energy can be easily varied from the bulk value to 5.2 eV, exclusively by changing the material's dimensionality . Even for relatively larger crystalline sizes, the quantum size effects are more noticeable in PbS thin film compared with other lead family films . Nanocrystalline PbS thin films have been a theme of substantial research due to their scientific importance in crystalline and polycrystalline forms like infrared radiation detectors, infrared emitters, solar control coatings, gas sensors, diode laser, optical information storage, photodetectors, and LEDs .…”

Section: Introductionmentioning

confidence: 99%

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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In the present report, undoped and tin (Sn)-doped lead sulfide thin films were synthesized via chemical bath deposition method. The effects of Sn molar concentration on the optical, structural, and morphological properties were systematically studied. The concentration of Sn in the chemical bath was characterized by the ratio of [Sn +2 ]/[Pb +2 ] and varied from 0 to 15 at.%. Both doped and undoped thin films were polycrystalline in nature with a face-centered cubic crystal structure; however, the preferred orientations of the crystallites were varied along the (111) and (200) planes with Sn-doping concentration. The X-ray powder diffraction results also showed that peak intensities and the crystalline size were decreased with increasing Sn concentration.The lattice constant varied with Sn concentration and found in the range of 6.020 to 5.944 Å. The variation of Sn concentration in PbS:Sn thin films were confirmed by energy dispersive X-ray analyses study. The scanning electron microscope and atomic force microscopy studies revealed that Sn doping had a critical role on the surface roughness and morphology of the PbS:Sn thin films. The optical band gap study showed that the band gap of PbS:Sn thin films were engineered from 0.676 to 1.345 eV because of incorporation of Sn +2 ions via cost-effective chemical route.Room temperature photoluminescence spectra showed a well-defined peak at 427 nm and shoulders at 405 and 462 nm for all Sn-doped and undoped PbS samples.

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Structural, morphological, optical, and photoluminescence properties of nanocrystalline PbS thin films grown by chemical bath deposition

Cited by 34 publications

References 38 publications

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

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