Structural, magnetic, and transport studies of La0.8MnO3 films

Qian, Qi; Tyson, Trevor; Dubourdieu, C.; Bossak, A.; Senateur, J.P.; Deleon, M.; Bai, Jianming; Bonfait, G.; Maria, Jon Paul

doi:10.1063/1.1505667

Cited by 5 publications

(3 citation statements)

References 29 publications

(9 reference statements)

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“…Here we report the results for a ~120 nm thick film which were also found in a ~410 nm film. X-ray diffraction measurement shows that such thick films have low strain [17]. The in situ post-deposition annealing leads indeed to the strain relaxation.…”

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confidence: 89%

Optical evidence of mixed-phase behavior in manganite films

et al. 2008

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Synchrotron infrared measurements were conducted over the range 100 to 8000 cm -1 on a self-doped La x MnO 3-δ (x~0.8) film. From these measurements we determined the conductivity, the effective number of free carriers, and the specific phonon modes as a function of frequency. While the metal-insulator transition temperature (T MI ) and the magnetic ordering temperature (T C ) approximately coincide, the free carrier density onset occurs at a significantly lower temperature (~45 K below). This suggests that local distortions exist below T MI and T C which trap the e g conduction electrons. These regions with local distortions constitute an insulating phase which persists for temperatures significantly below T MI and T C .The initial large drop in resistivity is due to the enhanced magnetic ordering while further drops correspond to reductions in the insulating phase which increase the number of free carriers. : 78.20.-e, 72.80.-r, 75.47.Lx, 64.75.St PACS Numbers

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confidence: 89%

Optical evidence of mixed-phase behavior in manganite films

et al. 2008

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“…On LaAlO 3 , the strain relaxation leads to the progressive decrease of the c parameter as shown in Figure 3(a), and the c-value is close to the bulk value for thickness larger than 50 nm. The strain relaxation in these films was further investigated by a detailed X-ray diffraction study performed using synchrotron light source (at the National Synchrotron Light Source in Brookhaven) [73,74]. Both in-plane and out-of-plane lattice parameters were measured.…”

Section: Colossal Magnetoresistive Oxidesmentioning

confidence: 99%

Oxides heterostructures for nanoelectronics

Dubourdieu

Gélard

Salicio

et al. 2010

IJNT

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We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO 3 on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La 0.7 Sr 0.3 MnO 3 and La 0.8 MnO 3-δ as well as multiferroic hexagonal ReMnO 3 manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600°C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO 3 on Si is considered. Issues and control of the SrTiO 3 /Si interface are discussed. An abrupt interface is achieved. We show that SrTiO 3 on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO 3 or La 0.7 Sr 0.3 MnO 3 . La 0.7 Sr 0.3 MnO 3 films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO 3 buffer layers for the future integration of optics on Si.

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“…In our previous studies of La 0.8 MnO 3−␦ films, we found an increase in the degree of local distortion of the MnO 6 octahedra with reduced film thickness by near edge x-ray absorption spectroscopy at the manganese K edge. 10,11 Bulk magnetization measurements conducted by superconducting quantum interference device ͑SQUID͒ magnetometry on 6, 30, and 160 nm thick films showed a reduction of the magnetic ordering temperature ͑T c ͒ and magnetic saturation moment with a reduction in thickness. Films of the entire thickness range exhibit metal-like conductivity at low temperature.…”

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Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3−δ films

Tyson

Qian

Deleon

et al. 2007

Applied Physics Letters

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Mn K-edge resonant inelastic x-ray scattering measurements were performed on films of La0.8MnO3−δ. The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.

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Structural, magnetic, and transport studies of La0.8MnO3 films

Cited by 5 publications

References 29 publications

Optical evidence of mixed-phase behavior in manganite films

Optical evidence of mixed-phase behavior in manganite films

Oxides heterostructures for nanoelectronics

Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3−δ films

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