“…To obtain hetero‐epitaxial manganite films on Si substrates, thin buffer oxide layers with correlated lattice parameters, such as SrTiO 3 , are used . The hetero‐epitaxy is also achieved using single crystal substrates, such as SrTiO 3 (STO, cubic, a = 3.905 Å), LaAlO 3 (LAO, with pseudo cubic lattice constant of 3.788 Å), MgO (cubic, a = 4.205 Å), and NdGaO 3 (NGO, orthorhombic structure with a = 5.426 Å, b = 5.499 Å and c = 7.706 Å) . Therefore, strain engineering can be carried out by combining the film growth on imperfectly lattice‐matched substrates with the growth of additional oxide interlayers .…”