Structural, electrical and optical properties of AlSb thin films deposited by pulsed laser deposition

Binder and carbon-free SbSn-P nanocomposite thin films as anode materials for sodium-ion batteries

“…It can be seen that the as-deposited film is mainly composed of very small nanoparticles with a quite dense and smooth surface texture. In addition, there are a few of particulates with different diameters splashed on the samples surface, these particulates deposition is a common disadvantage of pulsed laser deposition [28][29][30]. EDX spectra of the as-deposited SbSn-P thin film indicates that the weight percentage of P in the film is about 4.7 wt.%, which is lower than the weight ratio in the target, possibly due to low vapor pressure of P. The as-deposited films were further characterized by XPS measurements.…”

Electron–phonon interaction effect on the photovoltaic parameters of indirect (direct) bandgap AlSb (GaSb) p–n junction solar cell devices: a density functional theoretical study

“…1,8,9 AlSb and GaSb also belong to the same group and have attracted a great deal of interest in recent years owing to their remarkable optoelectronic and photovoltaic properties, making them suitable for many technological applications. [10][11][12][13][14][15][16] In particular, AlSb is exploited in Li-ion batteries, 17 X-ray and gamma-ray radiation detectors, 18,19 electro-optical devices and p-n junction diodes. 20 The semiconducting AlSb has an indirect bandgap of B1.7 eV.…”

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

“…The high value of A indicates that the defect density of the PN junction was very large and the recombination velocity of defect was high in the device [24] The purpose of studying AlSb-base solar cells is to get low cost and environmental solar cells. In our previous work, ZnS/AlSb thin film solar cells were simulated by using wxAMPS and high conversion efficiency was obtained in the solar cells [15]. For the AlSb-base solar cells, ZnS is considered as one of the promising N-type buffer layer materials due to wide band gap and high transmittance [22,23].…”

“…Previously we have successfully prepared AlSb thin films based on our facile PLD method [15]. However, Al and Sb ions can easily react with air and moisture.…”