2022
DOI: 10.1039/d2cp03085c
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Electron–phonon interaction effect on the photovoltaic parameters of indirect (direct) bandgap AlSb (GaSb) p–n junction solar cell devices: a density functional theoretical study

Abstract: The semiconductors AlSb and GaSb have emerged, in recent years, as important candidates for photovoltaic applications due to their strong absorption coefficient and other photovoltaic properties. In this study, AlSb...

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Cited by 2 publications
(2 citation statements)
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“…The interface bandgap of heterostructure is smaller than their bulk band gap due to type-II bandoffsets [33]. Overall, the GGA-1/2 computed bandgaps are in reasonably good agreement with previously reported experimental and theoretical results [34][35][36][37]. The computed interface band gaps of heterostructures are in solar spectrum, particularly, the GaAs/AlAs structure has highly optimised band gap for efficient solar cell applications.…”
Section: Electronic Structure Of Gaas/alsb and Gaas/alas Heterostruct...supporting
confidence: 84%
See 1 more Smart Citation
“…The interface bandgap of heterostructure is smaller than their bulk band gap due to type-II bandoffsets [33]. Overall, the GGA-1/2 computed bandgaps are in reasonably good agreement with previously reported experimental and theoretical results [34][35][36][37]. The computed interface band gaps of heterostructures are in solar spectrum, particularly, the GaAs/AlAs structure has highly optimised band gap for efficient solar cell applications.…”
Section: Electronic Structure Of Gaas/alsb and Gaas/alas Heterostruct...supporting
confidence: 84%
“…At 320 K, the photocurrent starts below their direct bandgap. The photocurrent shifts towards the low energy side as the temperature increases due to strong EPC [18,20,35,52]. In case of GaAs/AlSb (GaAs/AlAs) structures, a strong shift can be seen for 320 K (see figures 6(a) and (b)) due to the charge carriers strongly interacting with the acoustic phonon density in the energy range of 0-23 meV (0-22 meV) and optical phonons density in the energy range of 24-95 meV (23-56 meV) in the EPC process (see figure 3).…”
Section: Photocurrent Density Of Gaas/alsb and Gaas/alas P-n Heteroju...mentioning
confidence: 99%