Structural Dependence of Grain Boundary Resistivity in Copper Nanowires

Kim, Tae‐Hwan; Nicholson, Don M.; Zhang, X.-G.; Evans, Boyd M.; Kulkarni, Nagraj; Kenik, E.A.; Meyer, Harry M.; Radhakrishnan, Balasubramaniam; Li, An‐Ping

doi:10.7567/jjap.50.08lb09

Cited by 5 publications

(8 citation statements)

References 25 publications

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“…In the case of thin films, the most advanced technique for the direct measurement of GB resistivity is based on isolation of GBs from the surrounding materials by creating trenches around them and then performing local electrical measurements. 4,14 −16,27 The lines are either fabricated by focused ion beam (FIB) milling 14,15 or by lithography fabrication processes employed in nano/microelectronics. 4,6,16 On such structures, a single GB can be probed by an electrical measurement setup consisting of four needles.…”

Section: Introductionmentioning

confidence: 99%

“…So far, only the resistivity of a high angle random GB containing tilt and twist components could be measured, while the resistivity of CSL and low angle GBs could not be resolved within the sensitivity limits of the measurement methods. 14,15 Here, we introduce a detailed methodology enabling highly sensitive and accurate local resistivity measurement of individual GBs in bulk Cu and thin films. The paper presents crystal growth and sample preparation methods, details on the electrical measurement technique, as well as three different methods for local measurements of a single GB.…”

Section: Introductionmentioning

confidence: 99%

“…Grain boundaries (GBs) are among the most significant defects influencing the electrical properties of metals. − Specifically, many studies reveal that GBs are the dominant electron scattering source in metals, reporting a higher contribution to resistivity than surface scattering even for low dimensional materials such as thin films and nanowires. − The acquisition of resistivity values for different GBs is a key parameter for the emerging studies involving the atomic structures, phases, and physical properties of GBs. − However, only a few studies focus on the resistivity measurement of an individual GB and interconnect it with the atomic structure of the interface. − Attempts to locally measure GB resistivity were limited by sample geometry, microstructure, and sensitivity of the corresponding electrical measurement techniques. Hence, additional experimental developments are required to locally sense the resistivity of individual GBs.…”

Section: Introductionmentioning

confidence: 99%

“…However, most of these methods can be exploited only at cryogenic temperatures. In the case of thin films, the most advanced technique for the direct measurement of GB resistivity is based on isolation of GBs from the surrounding materials by creating trenches around them and then performing local electrical measurements. ,− , The lines are either fabricated by focused ion beam (FIB) milling , or by lithography fabrication processes employed in nano/microelectronics. ,, On such structures, a single GB can be probed by an electrical measurement setup consisting of four needles. The needles, which are attached to piezostages enabling an accurate positioning, are designed for in situ scanning electron microscopy (SEM) operation and precise resistivity measurements.…”

Section: Introductionmentioning

confidence: 99%

“…The needles, which are attached to piezostages enabling an accurate positioning, are designed for in situ scanning electron microscopy (SEM) operation and precise resistivity measurements. So far, only the resistivity of a high angle random GB containing tilt and twist components could be measured, while the resistivity of CSL and low angle GBs could not be resolved within the sensitivity limits of the measurement methods. , …”

Section: Introductionmentioning

confidence: 99%

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Approaches to Measure the Resistivity of Grain Boundaries in Metals with High Sensitivity and Spatial Resolution: A Case Study Employing Cu

Bishara

Ghidelli

Dehm

2020

ACS Appl. Electron. Mater.

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It is well-known that grain boundaries (GBs) increase the electrical resistivity of metals due to their enhanced electron scattering. The resistivity values of GBs are determined by their atomic structure; therefore, assessing the local resistivity of GBs is highly significant for understanding structure–property relationships. So far, the local electrical characterization of an individual GB has not received much attention, mainly due to the limited accuracy of the applied techniques, which were not sensitive enough to detect the subtle differences in electrical resistivity values of highly symmetric GBs. Here, we introduce a detailed methodology to probe in situ or ex situ the local resistivity of individual GBs in Cu, a metallic model system we choose due to its low resistance. Both bulk Cu samples and thin films are investigated, and different approaches to obtain reliable and accurate resistivity measurements are described, involving the van der Pauw technique for macroscopic measurements as well as two different four-point-probe techniques for local in situ measurements performed inside a scanning electron microscope. The in situ contacts are realized with needles accurately positioned by piezodriven micromanipulators. Resistivity results obtained on coincidence site lattice GBs (incoherent Σ3 and asymmetric Σ5) are reported and discussed. In addition, the key experimental details as well as pitfalls in the measurement of individual GB resistivity are addressed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Approaches to Measure the Resistivity of Grain Boundaries in Metals with High Sensitivity and Spatial Resolution: A Case Study Employing Cu

Bishara

Ghidelli

Dehm

2020

ACS Appl. Electron. Mater.

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1D Copper Nanostructures: Progress, Challenges and Opportunities

Bhanushali

Ghosh

Ganesh

et al. 2014

Small

190

142

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One-dimensional noble metal nanostructures are important components in modern nanoscience and nanotechnology due to their unique optical, electrical, mechanical, and thermal properties. However, their cost and scalability may become a major bottleneck for real-world applications. Copper, being an earth-abundant metallic element, is an ideal candidate for commercial applications. It is critical to develop technologies to produce 1D copper nanostructures with high monodispersity, stability and oxygen-resistance for future low-cost nano-enabled materials and devices. This article covers comprehensively the current progress in 1D copper nanostructures, most predominantly nanorods and nanowires. First, various synthetic methodologies developed so far to generate 1D copper nanostructures are thoroughly described; the methodologies are in conjunction with the discussion of microscopic, spectrophotometric, crystallographic and morphological characterizations. Next, striking electrical, optical, mechanical and thermal properties of 1D copper nanostructures are highlighted. Additionally, the emerging applications of 1D copper nanostructures in flexible electronics, transparent electrodes, low cost solar cells, field emission devices are covered, amongst others. Finally, there is a brief discussion of the remaining challenges and opportunities.

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Thickness dependence of the resistivity of platinum-group metal thin films

Dutta

Sankaran

Moors

et al. 2017

Journal of Applied Physics

153

108

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We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinumgroup thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas-Shatzkes model [Phys. Rev. B 1, 1382(1970] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO 2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas-Shatzkes model in consideration of the experimental findings.

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Structural Dependence of Grain Boundary Resistivity in Copper Nanowires

Cited by 5 publications

References 25 publications

Approaches to Measure the Resistivity of Grain Boundaries in Metals with High Sensitivity and Spatial Resolution: A Case Study Employing Cu

Approaches to Measure the Resistivity of Grain Boundaries in Metals with High Sensitivity and Spatial Resolution: A Case Study Employing Cu

1D Copper Nanostructures: Progress, Challenges and Opportunities

Thickness dependence of the resistivity of platinum-group metal thin films

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