2001
DOI: 10.1063/1.1426255
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Structural and optical properties of ZnO films grown on R–Al2O3 substrates

Abstract: Structural and optical properties of ZnO films grown on R–Al2O3 substrates by atmospheric pressure chemical-vapor deposition were investigated using x-ray diffraction and photoluminescence. The (112̄0) plane of the ZnO film tilted 0.3° with respect to the (11̄02) plane of the substrate and rotated about 7° around the normal of the sample surface. Symmetric (112̄0) and asymmetric (202̄2) x-ray reflection on ZnO films with different thicknesses were carried out. Comparison with photoluminescence measurements all… Show more

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Cited by 31 publications
(13 citation statements)
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“…The in-plane crystalline orientation was analyzed using j-scans as shown in Fig. 5 [12,14]. These results show that the crystalline structure of the Mg x Zn 1Àx O films grown on r-sapphire substrates using a buffer layer is hexagonal (wurtzite), similar to the ZnO films grown r-sapphire substrates.…”
Section: Xrd Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…The in-plane crystalline orientation was analyzed using j-scans as shown in Fig. 5 [12,14]. These results show that the crystalline structure of the Mg x Zn 1Àx O films grown on r-sapphire substrates using a buffer layer is hexagonal (wurtzite), similar to the ZnO films grown r-sapphire substrates.…”
Section: Xrd Analysismentioning
confidence: 99%
“…The ZnO/(0 1 % 1 2) r-sapphire system possesses anisotropic properties which are useful for various important applications such as acousto-optic, and surface acoustic wave (SAW) devices [12,13]. The epitaxial relationships between ZnO and r-sapphire is known to be [12,14]: (1 1 % 2 0) ZnOJ(0 1 % 1 2) Al 2 O 3 and [0 0 0 1] ZnOJ[0 % 1 1 1] Al 2 O 3 . In this orientation, the c-axis of ZnO lies in the plane of the film.…”
Section: Introductionmentioning
confidence: 99%
“…So, AP-MOCVD is a promising way to grow high-quality ZnO films. However, there have been only a few investigations of AP-MOCVD growth of ZnO films reported in the literature [12][13][14][15]. The problem for MOCVD growth of ZnO is that Zn precursors are highly reactive with O precursors (usually oxygen or water), so that pre-reaction in the gas phase occurs easily and usually produces white powder on the substrate.…”
Section: Introductionmentioning
confidence: 98%
“…It is also well known as an outstanding piezoelectric material for surface acoustic wave (SAW) opto-electronic devices used in delay lines, filters and resonators in wireless communication and signal processing. Many different deposition methods, such as metal organic chemical vapor deposition (MOCVD) [1], molecular beam epitaxy (MBE) [2], sputtering [3], chemical vapor deposition (CVD) [4,5] laser deposition (PLD) [6,7], spray pyrolysis [8] and also the sol-gel technique [9], have been used for the growth of ZnO films on various substrates. Among these methods, the MOCVD technology is particularly interesting-not only because it leads to high-quality films, but also because it is applicable to industrial mass-production.…”
Section: Introductionmentioning
confidence: 99%