MOCVD growth and properties of ZnO thin films on LiNbO3 substrates

Wang, Yinzhen; Wang, Haili; Liu, Shiliang; Liu, Hongxia; Zhou, Shengming; Yin, Hao; Xu, Jun; Ye, Jiandong; Gu, Shulin; Zhang, Rong

doi:10.1016/j.jcrysgro.2005.01.069

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…18,19) In particular, it was applied to a surface acoustic wave (SAW) device in the combination with LN owing to piezoelectricity and ease of doping into a photoconductor. [20][21][22] The SAW device can be used for sensing, and materials with a large electromechanical coupling coefficient. 23) Optical properties of LN were investigated.…”

Section: Introductionmentioning

confidence: 99%

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO₃single crystal

Yasuhara

Kurishima

Chikyow³

et al. 2020

Jpn. J. Appl. Phys.

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Effects of polarity and pyroelectricity of LiNbO 3 (LN) on electrical properties of ZnO film were investigated. The ZnO films were annealed at 500 °C and 900 °C under an oxygen atmosphere to reduce the interface defects. Current-voltage (I-V ) and surface potential measurements showed that the as deposited ZnO did not show polarity dependence. The ZnO annealed at 500 °C on +LN and −LN showed semiconducting and metallic behaviors at low temperature, respectively. X-ray photoelectron spectroscopy revealed that the polarization of LN changed the band alignment of ZnO/LN interface. In addition, the pyroelectricity increased the band bending, resulting in the enhancement of semiconducting and metallic properties for +LN and −LN, respectively. Especially, the resistivity of ZnO annealed at 500 °C changed by 5-digit from 80 to 500 K. The pyroelectricity and polarity of LN should contribute to modulating the electrical properties of ZnO for environment sensing devices.

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Section: Introductionmentioning

confidence: 99%

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO₃single crystal

Yasuhara

Kurishima

Chikyow³

et al. 2020

Jpn. J. Appl. Phys.

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“…Highly oriented ZnO-based thin films have generally been deposited on single crystalline substrates such as sapphire, [6][7][8][9][10][11][12][13] MgO, 8 LiNbO 3 , 14 and on lattice-matched GaN 12,15 and ScAlMgO 4 16-18 substrates. The applications of these films are, however, restricted because of the use of special single-crystalline substrates.…”

Section: Introductionmentioning

confidence: 99%

Effects of Individual Layer Thickness on the Microstructure and Optoelectronic Properties of Sol–Gel‐Derived Zinc Oxide Thin Films

Tahar

Salah

et al. 2008

Journal of the American Ceramic Society

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Zinc oxide (ZnO) thin films were prepared under different conditions on glass substrates using a sol–gel process. The microstructure of ZnO films was investigated by means of diffraction analysis, and plan‐view and cross‐sectional scanning electron microscopy. It was found that the preparation conditions strongly affected the structure and the optoelectronic properties of the films. A structural evolution in morphology from spherical to columnar growth was observed. The crystallinity of the films was improved and columnar film growth became more dominant as the zinc concentration and the substrate withdrawal speed decreased. The individual layer thickness for layer‐by‐layer homoepitaxy growth that resulted in columnar grains was <20 nm. The grain columns are grown through the entire film with a nearly unchanged lateral dimension through the full film thickness. The columnar ZnO grains are c‐axis oriented perpendicular to the interface and possess a polycrystalline structure. Optical transmittance up to 90% in the visible range and electrical resistivity as low as 6.8 × 10−3·Ω·cm were obtained under optimal deposition conditions.

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“…Yet, there are only a few reports on growing ZnO thin films on LiNbO 3 substrates using PLD [10,11] or sputtering [12,13]. Furthermore, reports on the MOCVD growth of ZnO on LiNbO 3 [14] substrates are especially scarce. In this paper, we report for the first time the effect of annealing on properties of ZnO thin films grown on LiNbO 3 substrates by MOCVD.…”

Section: Introductionmentioning

confidence: 99%

MOCVD growth and properties of ZnO thin films on LiNbO3 substrates

Cited by 10 publications

References 14 publications

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO₃single crystal

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO₃single crystal

Effects of Individual Layer Thickness on the Microstructure and Optoelectronic Properties of Sol–Gel‐Derived Zinc Oxide Thin Films

Annealing effect on properties of Zno thin films grown on LiNbO3 substrates by MOCVD

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MOCVD growth and properties of ZnO thin films on LiNbO3 substrates

Cited by 10 publications

References 14 publications

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO3single crystal

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO3single crystal

Effects of Individual Layer Thickness on the Microstructure and Optoelectronic Properties of Sol–Gel‐Derived Zinc Oxide Thin Films

Annealing effect on properties of Zno thin films grown on LiNbO3 substrates by MOCVD

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Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO₃single crystal

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO₃single crystal