Metalorganic chemical vapor deposition and characterizations of epitaxial MgxZn1−xO (0⩽x⩽0.33) films on r-sapphire substrates

“…The(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) peak suggests that these structures have non-polar a-plane orientation. The relationship between a-plane of ZnO and ZnMgO films and r-sapphire substrates using XRD was identified to be(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) ZnO/ZnMgO || (11-12) Al2O3[11].…”

mentioning

confidence: 99%

Properties of ZnO/ZnMgO nanostructures grown on r-plane Al2O3 substrates by molecular beam epitaxy

Pietrzyk

Stachowicz

Jarosz

et al. 2015

Journal of Alloys and Compounds

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“…Mg x Zn 1)x O films grown without the use of the ZnO buffer show a textured structure; the presence of the buffer acts as a lattice matched crystalline template for the subsequent growth of the Mg x Zn 1)x O films. 15 The thickness of all the samples analyzed in this work ranged from 500 nm to 600 nm. Figure 1a High-resolution x-ray diffraction (HRXRD) analysis was carried out using a Bruker D8-Discover four-circle x-ray diffractometer with four-bounce Ge (220)-monochromated Cu K a1 radiation.…”

Section: Mocvd Growthmentioning

confidence: 99%

Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane Mg x Zn1–x O (0 ≤ x ≤ 0.3) Films

Saraf

Zhong

Dulub

et al. 2007

Journal of Elec Materi

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The a-plane Mg x Zn 1)x O (0 £ x £ 0.3) films were grown on r-plane (01 " 12) sapphire substrates using metal-organic chemical vapor deposition (MOCVD). Growth was done at temperatures from 450°C to 500°C, with a typical growth rate of~500 nm/h. Field emission scanning electron microscopy (FESEM) images show that the films are smooth and dense. X-ray diffraction (XRD) scans confirm good crystallinity of the films. The interface of Mg x Zn 1)x O films with r-sapphire was found to be semicoherent as characterized by high-resolution transmission electron microscopy (HRTEM). The Mg x Zn 1)x O surfaces were characterized using scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV). Low-energy electron diffraction (LEED) shows well-ordered and single-crystalline surfaces. The films have a characteristic wavelike surface morphology with needle-shaped domains running predominantly along the crystallographic c-direction. Photoluminescence (PL) measurements show a strong near-band-edge emission without observable deep level emission, indicating a low defect concentration. In-plane optical anisotropic transmission was observed by polarized transmission measurements.

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“…[1][2][3] ZnO is attracting much interest for use in blue light-emitting diodes, short-wavelength laser diodes, and hightemperature and/or high-power and RF devices for which typical operating temperatures are above 200°C. 4 ZnO is important in emerging UV laser technology 1-3,5-7 and in modulators.…”

Section: Introductionmentioning

confidence: 99%

Mg x Zn1−x O Thin-Film Transistor-Based UV Photodetector with Enhanced Photoresponse

Reyes

Duan

et al. 2015

Journal of Elec Materi

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ZnO and its ternary alloy Mg x Zn 1Àx O (MZO) are promising wide-band-gap semiconductor materials well-suited to UV detection. The Mg content of MZO facilitates energy band gap engineering, enabling fabrication of UV photodetectors that can operate in the deep-UV region. Different types of UV photodetector based on ZnO have been reported, including photoconductive, Schottky, and transistor types. Transistor-based photodetectors have the advantage of being three-terminal devices, thus enabling biasing control and implementation in addressable arrays. In this paper we report an MZO thinfilm-transistor (TFT)-based UV photodetector. The device has a low dark current (2 9 10 À14 A) and an ON/OFF ratio of 10 11 . We show that by using a small amount of Mg (5%) in the MZO TFT we can substantially improve the photoresponse recovery time of the photodetector to 15 ms compared with 42 ms for a similar TFT with 0% Mg. We also observed a shift in the cutoff wavelength from 377.21 nm for the 0% Mg TFT photodetector down to 370.96 nm for the MZO TFT photodetector. We attribute the enhanced recovery time improvement of the MZO TFT UV photodetector to suppression of oxygen vacancies as a result of incorporation of the Mg in the MZO.

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Metalorganic chemical vapor deposition and characterizations of epitaxial MgxZn1−xO (0⩽x⩽0.33) films on r-sapphire substrates

Cited by 20 publications

References 27 publications

Properties of ZnO/ZnMgO nanostructures grown on r-plane Al2O3 substrates by molecular beam epitaxy

Properties of ZnO/ZnMgO nanostructures grown on r-plane Al2O3 substrates by molecular beam epitaxy

Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane Mg x Zn1–x O (0 ≤ x ≤ 0.3) Films

Mg x Zn1−x O Thin-Film Transistor-Based UV Photodetector with Enhanced Photoresponse

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